Briefs: Silicon Hall-Effect Power Ic'S For Brushless Motors

IEEE Transactions on Electron Devices

Volumn 29, Issue 1, 1982, Pages 151-154

  Kanda, Yozo ^a   Migitaka, Masatoshi ^a   Yamamoto, Hiroshi ^a   Morozumi, Hiroshi ^a   Okabe, Takahiro ^a   Okazaki, Shinji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT DEVICES;

INTEGRATED CIRCUITS;

EID: 0019914511     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20673     Document Type: Article

References (6)

1. G. Bosch, “A Hall device in an integrated circuit,“ Solid-State Electron., vol. 11, pp. 712-714, 1968.
2. Y. Kanda and M. Migitaka, “Effect of mechanical stress on the offset voltages of Hall devices in Si IC,“ Phys. Status. Solidi (a),
3. Y. Kanda and M. Migitaka, “Design considerations for Hall device in Si IC,“ Phys. Status Solidi (a), vol. 38, pp. K41-K44, 1976.
4. Y. Kanda, “A graphical representation of the piezoresistance coefficients in silicon,“ this issue, pp. 64-70.
5. J. J. Wortman and R. A. Evans, “Young's modulus, shear modulus, and Poisson's ratio in silicon and germanium,“ J. Appl. Phys., vol.
6. J. W. Mayer, L. Ericksson, and J. A. Davies, Ion Implantation in Semiconductors. New York: Academic Press, 1970, ch. 6, p. 224.