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Volumn 2, Issue 12, 1981, Pages 311-313

Characterization of Positive Resist Development

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0019698169     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1981.25446     Document Type: Article
Times cited : (12)

References (8)
  • 2
    • 0016522738 scopus 로고
    • In-situ measurement of dielectric thickness during etching or developing processes
    • July
    • K. L. Konnerth and F. H. Dill, “In-situ measurement of dielectric thickness during etching or developing processes,” IEEE Trans. Electron Devices, ED-22, no. 7, p. 452, July 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , Issue.7 , pp. 452
    • Konnerth, K.L.1    Dill, F.H.2
  • 3
    • 0018308228 scopus 로고
    • In-situ characterization of positive resist development
    • January-February
    • W. G. Oldham, “In-situ characterization of positive resist development,” Optical Engineering, vol. 18, no. 1, p. 59, January–February 1979.
    • (1979) Optical Engineering , vol.18 , Issue.1 , pp. 59
    • Oldham, W.G.1
  • 4
    • 0019018747 scopus 로고
    • Photosolubility of diazoquinone resists
    • May
    • D. Meyerhofer, “Photosolubility of diazoquinone resists,” IEEE Trans. Electron Devices, ED-27, no. 5, p. 921, May 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.5 , pp. 921
    • Meyerhofer, D.1
  • 5
    • 0001506523 scopus 로고
    • IOTA, a new computer controlled thin film thickness measurement tool
    • K. L. Konnerth and F. H. Dill, “IOTA, a new computer controlled thin film thickness measurement tool,” Solid-State Electron., vol. 15, pp. 371–380, 1972.
    • (1972) Solid-State Electron. , vol.15 , pp. 371-380
    • Konnerth, K.L.1    Dill, F.H.2
  • 6
    • 84938007121 scopus 로고
    • Characterization of mid UV resists: photochemistry and models
    • Santa Barbara, California, June 24–26
    • D. C. Hofer and C. G. Wilson, “Characterization of mid UV resists: photochemistry and models,” Electronic Materials Conference, Santa Barbara, California, June 24–26., 1981.
    • (1981) Electronic Materials Conference
    • Hofer, D.C.1    Wilson, C.G.2
  • 7
    • 0018457024 scopus 로고
    • A general simulator for VLSI lithography and etching processes: part I-application to projection lithography
    • April
    • W. G. Oldham, S. M. Nandgaonkar, A. R. Neureuther, and M. M. O'Toole, “A general simulator for VLSI lithography and etching processes: part I-application to projection lithography,” IEEE Trans. Electron Devices, ED-26, no. 4, p. 717, April 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.4 , pp. 717
    • Oldham, W.G.1    Nandgaonkar, S.M.2    Neureuther, A.R.3    O'Toole, M.M.4
  • 8
    • 0017490398 scopus 로고
    • Thermal effects on the photoresist AZI350J
    • May
    • F. H. Dill and J. M. Shaw, “Thermal effects on the photoresist AZI350J,” IBM J. Res. Develop., vol. 21, no. 3, pp. 210–218, May 1977.
    • (1977) IBM J. Res. Develop. , vol.21 , Issue.3 , pp. 210-218
    • Dill, F.H.1    Shaw, J.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.