The effects of test conditions on MOS radiation-hardness results

IEEE Transactions on Nuclear Science

Volumn 28, Issue 6, 1981, Pages 4281-4287

  Dressendorfer, P V ^a   Soden, J M ^a   Harrington, J J ^a   Nordstrom, T V ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

EID: 0019680088     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1981.4335713     Document Type: Article

References (6)

1. See for example, Zaininger, K. H. and Holmes-Siedle, A. G. RCA Review 28, pp. 208–240, June 1967.
2. Derbenwick, G. J. and Sander, H. H. IEEE Trans. on Nuclear Science, NS-24, pp. 2244–2247, December 1977.
3. Gibbon, C. F., Habing, D. H., and Flores, R. S., IEEE Trans. on Nuclear Science, NS-27, pp 1712–1715 (1980)
4. Nordstrom, T. V., and Gibbon, C.F., IEEE Trans. on Nuclear Science, this issue.
5. Winokur, P. S., Boesch, H. E. Jr., McGarrity, J. M., and McLean, F. B., J. Appl. Phys. 50, pp. 3492–3494, May 1979.
6. McLean, F. B. IEEE Trans on Nuclear Science, NS-27, pp. 1651–1657, December 1980.