A Model for Conduction in Polycrystalline Silicon—Part I: Theory

IEEE Transactions on Electron Devices

Volumn 28, Issue 10, 1981, Pages 1163-1171

  Mandurah, Mohammad M ^a   Saraswat, Krishna C ^a   Kamins, Theodore I ^b  

^a STANFORD UNIVERSITY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0019623620     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20504     Document Type: Article

References (21)

1. M. M. Mandurah, K. C. Saraswat, and T. I. Kamins, “Phosphorus doping of low pressure chemically vapor-deposited silicon films,” J. Electrochem. Soc., vol. 126, p. 1019, 1979.
2. T. I. Kamins, “Hall mobility in chemically deposited polycrystalline silicon,” J. Appl. Phys., vol. 42, p. 4357, 1971.
3. J.Y.W. Seto, “The electrical properties of polycrystalline silicon,” J. Appl. Phys., vol. 46, p. 5247, 1975.
4. G. Baccarani, B. Ricco, and G. Spadini, “Transport properties of polycrystalline silicon films,” J. Appl. Phys., vol. 49, p. 5565, 1978.
5. G. J. Korsh and R. S. Muller, “Conduction properties of lightly doped polycrystalline silicon,” Solid-State Electron., vol. 21, p. 1045, 1978.
6. N.C.C. Lu, L. Gerzberg, and J. D. Meindl, “A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors,” IEEE Electron Devices Lett., vol. EDL-1, p. 36, 1980.
7. M. E. Cowher and T. O. Sedgwick, “Chemical vapor-deposited polycrystalline silicon,” J. Electrochem. Soc., vol. 119, p. 1565, 1978.
8. A. L. Fripp and L. H. Slack, “Resistivity of doped polycrystalline silicon films,” J. Electrochem. Soc., vol. 120, p. 145, 1973.
9. M. M. Mandurah, K. C. Saraswat, and T. I. Kamins, “Arsenic segregation in polycrystalline silicon,” Appl. Phys. Lett., vol. 36, p. 683, 1980.
10. —, “Dopant segregation in polycrystalline silicon,” Extended Abstracts, Electrochemical Society 156th Meeting, Los Angeles, CA, vol. 79-2, p. 1433, 1979.
11. M. M. Mandurah, K. C. Saraswat, C. R. Helms, and T. I. Kamins, “Dopant segregation in polycrystalline silicon,” J. Appl. Phys., vol. 51, p. 5755, 1980.
12. Y. Wada and S. Nishimatsu, “Grain growth mechanism of heavily phosphorus-implanted polycrystalline silicon,” J. Electrochem. Soc., vol. 125, p. 1499, 1978.
13. W. E. Spear and P. G. le Comber, “Electronic properties of sub-stitutionally doped Amorphous Si and Ge,” Phil. Mag., vol. 33, p. 935, 1976.
14. J. C. Knights, “Substitutional doping in amorphous semiconductors, the As-Si system,” Phil. Mag., vol. 34, p. 663, 1976.
15. M. Taniguchi, M. Hirose, and Y. Osaka, “Substitutional doping of chemically vapor-deposited amorphous silicon,” J. Cryst. Growth, vol. 45, p. 126, 1978.
16. J. G. Simmons, “Generalized formula for the electric tunneling effect between similar electrodes separated by a thin insulating film,” J. Appl. Phys., vol. 34, p. 1793, 1963.
17. E. L. Murphy and R. H. Good, “Thermionic emission, field emission and the transition region,” Phys. Rev., vol. 102, p. 1464, 1956.
18. R. Stratton, “Volt-current characteristics for tunneling through insulating films,” J. Phys. Chem. Solids, vol. 33, p. 1177, 1962.
19. G. Baccarani, M. Impronta, B. Ricco, and P. Feria, “I-V characteristics of polycrystalline silicon resistors,” Rev. Phys. Appl., vol. 13, p. 777, 1978.
20. S. J. Fonash, “The role of the interfacial layer in metal-semi-conductor solar cells,” J. Appl. Phys. vol. 46, p. 1286, 1975.
21. M. M. Mandurah, “The physical and electrical properties of polycrystalline silicon,” Ph.D. thesis, Stanford University, 1981.