Aluminum alloy metallization for integrated circuits

Thin Solid Films

Volumn 83, Issue 2, 1981, Pages 195-205

  Ghate, P B ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

ALUMINUM AND ALLOYS;

EID: 0019619427     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(81)90666-0     Document Type: Article

References (12)

1. Evolution and Current Status of Aluminum Metallization
2. Reduction of Electromigration in Aluminum Films by Copper Doping
3. Electromigration in thin films
4. SLT Device Metallurgy and its Monolithic Extension
5. Switching processes and dielectric breakdown in polycrystalline Nb2O5 films
6. Electromigration testing of Al-alloy films
7. Effect of vacuum ambience on Al–Si contacts
8. Failure mechanism studies in multilevel metallization systems
9. A 1-µm bipolar VLSI technology