LOW-TEMPERATURE ANNEALING AND HYDROGENATION OF DEFECTS AT THE Si-SiO2 INTERFACE.

Journal of vacuum science & technology

Volumn 19, Issue 3, 1981, Pages 390-394

  Johnson, N M ^a   Biegelsen, D K ^a   Moyer, M D ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA - SURFACES;

INTERFACES;

SEMICONDUCTING SILICON;

EID: 0019614215     PISSN: 00225355     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.571070     Document Type: Conference Paper

References (19)