A Study of Pd/Si MIS Schottky Barrier Diode Hydrogen Detector

IEEE Transactions on Electron Devices

Volumn 28, Issue 9, 1981, Pages 1003-1009

  Ruths, Paul F ^a   Ashok, S ^b   Ruths, Joel M ^c  

^a Western Electric Co ^*  (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c Mostek Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0019607497     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20475     Document Type: Article

References (27)

1. K. I. Lundstrom, M. S. Shivaraman, and C. M. Svensson, “A hydrogen-sensitive Pd-gate MOS transistor,” J. Appl. Phys., vol. 46, pp. 3876–3881, 1975.
2. M. C. Steele, J. W. Hile, and B. A. MacIver, “Hydrogen-sensitive palladium gate MOS capacitors,” J. Appl. Phys., vol. 47, pp. 2537–2538, 2538, 1976.
3. M. C. Steele and B. A. MacIver, “Palladium/cadmium-sulfide Schottky diodes for hydrogen detection,” Appl. Phys. Lett., vol. 28, pp. 6 87–6 88, 1976.
4. P. Bergveld, “Development, operation, and application of the ion-sensitive field-effect transistor as a tool for electrophysiology,” IEEE Trans. Biomed. Eng., vol. BME-19, pp. 342–351, 1972.
5. H. Windischmann and P. Mark, “A model for the operation of a thin-film SnOx conductance-modulation carbon monoxide sensor,” J. Electrochem. Soc., vol. 126, pp. 627–633, 1979.
6. M. Nitta and M. Haradome, “Thick-film CO gas sensors,” IEEE Trans. Electron Devices, vol. ED-26, pp. 247–249, Mar. 1979.
7. J. R. Stetter, “A surface chemical view of gas detection,” J. Colloid Interface Set., vol. 65, pp. 432–443, 1978.
8. F. A. Lewis, The Palladium-Hydrogen System. New York: Academic Press, 1967, ch. 1, 4.
9. K. Ito, “Hydrogen-sensitive Schottky barrier diodes,” Surface Sci. vol. 86, pp. 345–352, 1979.
10. N. Yamamoto, S. Tonomura, T. Matsuoka, and H. Tsubomura, “A study on a palladium-titanium oxide Schottky diode as a detector for gaseous components,” Surface Sci. vol. 92, pp. 400–406, 406, 1980.
11. M. S. Shivaraman, L. Lundstrom, C. Svensson, and H. Hammarshin, “Hydrogen sensitivity of palladium silicon Schottky barriers,” Electron. Lett., vol. 12, pp. 483–484, 1976.
12. J. M. Ruths, S. J. Fonash, and T. E. Sullivan, “The effects of hydrogen on palladium metal-oxide-semiconductor structures,” Extended Abstracts-154th Meeting of Electrochemical Society, vol. 78–2, pp. 648–649, 1978.
13. T. C. McGill, “Phenomenology of metal-semiconductor electrical barriers,” J. Vac. Sci. Technol., vol. 11, pp. 935–942, 1974.
14. L. L. Tongson, B. E. Knox, T. E. Sullivan, and S. J. Fonash, “Comparative study of chemical and polarization characteristics of Pd/Si and Pd/SiOx /Si Schottky-barrier-type devices,” J. Appl. Phys., vol. 50, pp. 1535–1537, 1979.
15. B. Keramati and J. N. Zemel, “Confirmation of hydrogen surface states at the Si-SiO2 interface,” in The Physics of SiO2 and its Interfaces, S. T. Pantelides, ed. New York: Pergamon, 1978, pp. 459–463.
16. S. J. Fonash, “Outline and comparison of the Possible effects present in a metal-thin-film-insulator-semiconductor solar cell,” J. Appl. Phys., vol. 47, pp. 3597–3602, 1976.
17. E. H. Rhoderick, Metal Semiconductor Contacts. Oxford, England: Clarendon Press, 1978, ch. 2–4.
18. J. M. Ruths, “The effect of hydrogen absorption on palladium MS and MIS structures of silicon and gallium arsenide,” B.S. thesis, The Pennsylvania State University, Aug. 1978 (unpublished).
19. T. Engels and H. Kuipers, “A molecular-beam investigation of the reaction H2 + IO2 −+ H2O on Pd (111),“ Surface Sc., vol. 90, pp. 181–196, 1979.
20. A. G. Revesz, “The role of hydrogen in SiO2 films on silicon,” J. Electrochem. Soc., vol. 126, pp. 122–129, 1979.
21. I. Szymerska and M. Lipski, “LEED-AES studies of chemisorption-induced sulfur segregation from the bulk to the surface of Pd(100),“1 Catalysis, vol. 41, pp. 197–201, 1976.
22. A. Janko, W. Palczewski, and I. Szymerska, “The effect of palladium hydride phase transformations on the reconstruction and catalytic activity of palladium films,” J. Catalysis, vol. 62, pp. 264–266, 1980.
23. B. Keramati, “Interaction of H2 with Pd-thin SiO2-Si diodes,” Ph.D. dissertation, University of Pennsylvania, 1980.
24. R. Dus, “Hydrogen adsorption and absorption on evaporated palladium films,” Surface Sc., vol. 42, pp. 324–328, 1974.
25. J. P. Ponpon and P Siffert, “Role of oxygen in the mechanism of formation of Schottky diodes,” J. Appl. Phys., vol. 49, pp. 6004–6011, 6011, 1978.
26. “Further results on the aging of silicon Schottky diodes: Influence of the metal,” J. Appl. Phys., vol. 50, pp. 5050–5051, 1979.
27. M. S. Shivaraman, “Detection of H2S with Pd-gate MOS field effect transistors,” J. Appl. Phys., vol. 47, pp. 3592–3593, 1976.