SCOPUS 정보 검색 플랫폼

Volumn 52, Issue 8, 1981, Pages 5235-5242

New features of the temperature dependence of photoconductivity in plasma-deposited hydrogenated amorphous silicon alloys

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - AMORPHOUS;

PHOTOCONDUCTIVITY;

EID: 0019597325 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.329427 Document Type: Article

Times cited : (75)

References (28)

3
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- Anderson, D.A.¹ Spear, W.E.²

11
- 0019299812
- (1980) Solar Cells , vol.2 , pp. 385
- Kampas, F.J.¹ Griffith, R.W.²

18
- 0009002070
- (1972) Phys. Rev. B , vol.6 , pp. 1328
- Sklensky, A.F.¹ Bube, R.H.²

19
- 0017728796
- (U. of Edinburgh, Edinburgh), edited by W. E. Spear
- (1977) Amorphous and Liquid Semiconductors , pp. 472
- Brodie, D.E.¹

22
- 84951057349
- A more precise description employs quasi-Fermi levels for trapped carriers in states 1 and 2;

23
- 0004214909
- see Ref. 10 and R. W. Griffith, in, edited by L. E. Murr(Academic, New York) Chap19
- (1980) Solar Materials Science

24
- 0001262606
- (1971) Phys. Rev. B , vol.4 , pp. 502
- Simmons, J.G.¹ Taylor, G.W.²

26
- 84951202677
- Of course, with the typical impurity incorporation depicted in Fig. 9, it is also possible that the "" gap-state density itself is altered in the case of air-doped alloys.
- intrinsic

27
- 84951134977
- Equation (2) can be understood on the following basis. The excess-carrier electron density is given by [formula omitted] where [formula omitted] is the recombination center (hole) density. Consider an exponential tail of states 2, [formula omitted] where [formula omitted] (a reference energy). Then [formula omitted] where the quantity [formula omitted] has been neglected and inessential multiplicative factors are ignored. Thus [formula omitted] where [formula omitted]

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