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Solid State Electronics

Volumn 24, Issue 7, 1981, Pages 629-634

Ionization coefficient measurement in GaAs by using multiplication noise characteristics

(2) Ando, H a Kanbe, H a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, PHOTODIODE - NOISE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0019586734 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(81)90191-X Document Type: Article

Times cited : (39)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.