Laser annealing of thin buried amorphous layers in silicon

physica status solidi (a)

Volumn 65, Issue 2, 1981, Pages 677-682

  Gotz G ^a   Geiler, H D ^a   Wagner, M ^a   Heinig, K H ^b   Woittenneck, H ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0019574440     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210650234     Document Type: Article

References (5)

1. Annealing mechanism of radiation damage and dopants in pulsed laser light irradiated ion implanted layers