GaAs FET Large-Signal Model and its Application to Circuit Designs

IEEE Transactions on Electron Devices

Volumn 28, Issue 2, 1981, Pages 171-175

  Mishima, Katsuhiko ^b   Wrona, Beverly ^a  

^a RAYTHEON COMPANY   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS;

TRANSISTORS, FIELD EFFECT;

EID: 0019528218     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20306     Document Type: Article

References (5)

1. Y. Takayama, “A new load-pull characterization method for microwave power transistors,” in 1976 MTT-S Int. Microwave Symp., Dig, Tech. Papers, pp. 218–220.
2. H. A. Willing, C. Rauscher, and P. deSantis, “A technique for predicting large-signal performance of a GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, pp. 1017–1023, Dec. 1978.
3. C. Rauscher and H. A. Willing, “Quasi-static approach to simulating nonlinear GaAs FET behavior,” in 1979 MTT-S Int. Microwave Symp.,Dig. Tech. Papers, pp. 402–404.
4. H. Statz, H. Haus, and R. Pucel, “Noise characteristics of gallium arsenide field effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549–562, Sept. 1974.
5. Y. Tajima, “GaAs FET applications for injection-locked oscillators and self-oscillating mixers,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, no. 7, pp. 629–632, July 1979.