|
Volumn 103, Issue 1, 1981, Pages 269-279
|
On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
HALL EFFECT;
SEMICONDUCTING SILICON COMPOUNDS - IMPURITIES;
SEMICONDUCTING ZINC COMPOUNDS - IMPURITIES;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
EID: 0019438073
PISSN: 03701972
EISSN: 15213951
Source Type: Journal
DOI: 10.1002/pssb.2221030130 Document Type: Article |
Times cited : (59)
|
References (50)
|