Influence of the Surface and the Episubstrate Interface on the Drain Current Drift of GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 28, Issue 7, 1981, Pages 878-882

  Itoh, Hitoshi ^a   Ohata, Keichi ^a   Hasegawa, Fumio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTOR; SEMICONDUCTOR;

TRANSISTORS, FIELD EFFECT;

EID: 0019392860     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20447     Document Type: Article

References (6)

1. D. R. Ch’en, H. F. Cooke, J. N. Whoely, and G. J. Policy, “Long term stabilization of microwave FETs,” in 1976 ISSCC Dig. Tech. Papers, pp. 160–161.
2. K. Sekido and J. A. Arden, “Recent advances in FET,” Microwave Syst. News., vol. 6, Apr./May, pp. 71-81, 1976.
3. K. Ohata et al., private communication.
4. H. F. Cooke, “Microwave FET's, “ in 1978 ISSCC Dig. Tech. Papers, pp. 116–117.
5. T. Itoh and H. Yanai, “Long-term drift of GaAs MESFET characteristics and it's dependence on substrate with buffer layer,” in Gallium Arsenide and Related Compounds 1978 Bristol and London, England: The Institute of Physics, 1979, pp. 326–334.
6. K. Ohata, H. Itoh, and F. Hasegawa, “Investigation on the drift of GaAs MESFET's by high frequency parameters,” in Proc. 11th Conf. (1979 Int.) on Solid-State Devices, Tokyo, pp. 357–360.