Impact ionisation in multilayered hetero junction structures

Electronics Letters

Volumn 16, Issue 12, 1980, Pages 467-469

  Chin, R ^a   Holonyak, N ^a   Stillman, G E ^a   Tang, J Y ^a   Hess, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Charge carriers; Ionisation; Photoelectric devices; Semiconductors

Indexed keywords

SEMICONDUCTOR MATERIALS - IONIZATION;

SEMICONDUCTOR DEVICES;

EID: 0019317240     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19800329     Document Type: Article

References (5)

1. Mcintyre, R. J.: ‘Multiplication noise in uniform avalanche diodes’, IEEE Trans., 1966, ED-13, pp. 164–167
2. Stillman, G. E., and Wolfe, C. M.: ‘Avalanche Photodiodes’, in Willardson, R. K., and Beer, A. C. (Eds.): ‘Semiconductors and Semimetals’ (Academic, New York, 1977), pp. 291–393
3. Crowell, C. R., and Sze, S. M.: ‘Temperature dependence of avalanche multiplication in semiconductors’, Appl. Phys. Lett., 1966, 9, pp. 242–244
4. Shichijo, H., Kolbas, R. M., Holonyak, N. Jr., Dupuis, R. D., and Dapkus, P. D.: ‘Carrier collection in a semiconductor quantum well’, Solid State Commun., 1978, 27, pp. 1029–1032
5. Holonyak, N. Jr., Kolbas, R. M., Dupuis, R. D., and Dapkus, P. D.: ‘Quantum-well heterostructure lasers’, IEEE J. Quantum Electron., 1980, QE-16, pp. 170–186