High Dose Rate Burnout in Silicon Epitaxial Transistors

IEEE Transactions on Nuclear Science

Volumn 27, Issue 6, 1980, Pages 1411-1415

  Wrobel, T F ^a   Azarewicz, J L ^b  

^a MISSION RESEARCH CORPORATION   (United States)

^b JACOR ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

EID: 0019279476     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4331042     Document Type: Article

References (9)

1. Wrobel, T. F. and J. L. Azarewicz, High Dose Rate Burnout, IRT Corporation, Report # INTEL-RT-8025-480, August 14, 1974.
2. Wrobel, T. F. and R. A. Berger, “Silicon Calorimeter System for Gamma and Electron-Beam Radiation Dosimetry,” IEEE Trans. Nucl. Sci., Vol. NS-22, December 1975, pp. 2314–2318.
3. Berger, R. A. and J. L. Azarewicz, “Packaging Effects on Transistor Radiation Response,” IEEE Trans. Nucl. Sci., Vol. NS-22, December 1975, pp. 2568–2572.
4. Wunch, D. C., and R. R. Bell, “Determination of Threshold Failure Levels of Semiconductor Diode and Transistors Due to Pulsed Voltages,” IEEE Trans. Nucl. Sci., Vol. NS-15, December 1968, pp. 244–259.
5. Habing, D. and J. Wirth, “Anomalous Photocurrent Generation in Transistor Structures,” IEEE Trans. Nucl. Sci., Vol. NS-13, December 1966, pp. 86–94.
6. Gaillard, R. and R. Genre, “Anomalous Photocurrents in Low-Power Epitaxial Transistors,” IEEE Trans. Nucl. Sci., Vol. NS-19, December 1972, pp. 406–413.
7. Poon, H. C. and H. K. Gummel, “High Injection in Epitaxial Transistors,” IEEE Trans. Electron Devices, Vol. ED-16, No. 5, May 1969, pp. 455–457.
8. Poon, H. C. and H. K. Gummel, “An Integral Charge Control Model of Bipolar Transistors,” BSTJ, May-June 1970, P. 847.
9. Leadon, R. E. and M. L. Vaughn, Short-Pulsed Radiation Effects on Dynamic Electronic Components,” DASA Report 2358, June 1969.