1-W Millimeter-Wave Gunn Diode Combiner

IEEE Transactions on Microwave Theory and Techniques

Volumn 28, Issue 12, 1980, Pages 1460-1463

  Ma, Young El ^a   Sun, Cheng ^b  

^a RAYTHEON COMPANY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, GUNN EFFECT;

EID: 0019149783     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1980.1130267     Document Type: Article

References (4)

1. T. G. Ruttan, “42-GHz push-pull Gunn oscillator,” Proc. IEEE, vol. 60, pp. 1441–1442, Nov. 1972.
2. K. R. Varian, “Power combining in a single multiple-diode cavity,” in 1978 IEEE MTT-S Int. Microwave Symp. Dig., pp. 344–345, June 1978.
3. A. K. Talwar, “A dual-diode 73-GHz Gunn oscillator,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 510–512, May 1979.
4. K. Kurokawa and F. M. Magalhaes, “An X-band 10-Watt multiple IMPATT oscillator,” Proc. IEEE, vol. 59, pp. 102–103, Jan. 1971.