Sensitive Technique for Measuring Small MOS Gate Currents

IEEE Electron Device Letters

Volumn 1, Issue 11, 1980, Pages 231-233

  Gaensslen, F H ^a   Aitken, J M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

EID: 0019080718     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25299     Document Type: Article

References (2)

1. P. Cotrell, R.R. Troutman and T.H. Ning, Hot-Electron Emission in N-Channel IGFET's, IEEE Trans, on Electron Devices, vol. ED-26, pp. 520-533, 1979.
2. B. Euzent, Hot Electron Injection Efficiency in IGFET Structures, Proc. IEEE Rel. Phys. Symp. (1977).