Comparative Potential Performance of Si, GaAs, GaInAs, InAs Submicrometer-Gate FET's

IEEE Transactions on Electron Devices

Volumn 27, Issue 11, 1980, Pages 2158-2160

  Cappy, A ^a   Carnez, B ^a   Fauquembergues, R ^a   Salmer, G ^a   Constant, E ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0019079615     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20166     Document Type: Article

References (12)

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9. B. Carnez, A. Cappy, A. Kaszinski, E. Constant, and G. Salmer, “Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics,” J. Appl. Phys., vol. 51, no. 1, Jan. 1980.
10. M. Shur, “Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors,” Electron. Lett., vol. 12, no. 23, p. 615, 1976.
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12. R. Engelmann and C. Liechti, “Bias dependence of GaAs and InP MESFET parameters,” IEEE Trans. Electron Devices, vol. ED-24, no. 11, p. 1288, 1977.