Resistivity-Dopant Density Relationship for Boron-Doped Silicon

Journal of the Electrochemical Society

Volumn 127, Issue 10, 1980, Pages 2291-2294

  Thurber, W R ^a   Mattis, R L ^a   Liu, Y M ^b   Filliben, J J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

capacitance voltage technique; Hall effect; hole mobility; Irvin curves; semiconductor

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTING SILICON;

EID: 0019071879     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129394     Document Type: Article

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