An Mo Gate 4K Static MOS RAM

IEEE Transactions on Electron Devices

Volumn 27, Issue 8, 1980, Pages 1586-1590

  Ishikawa, Hajime ^a   Yamamoto, Minoru ^a   Tokunaga, Hiroshi ^a   Toyokura, Nobuo ^a   Yanagawa, Fumihiko ^b   Kiuchi, Kazuhide ^b   Kondo, Mamoru ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RAM;

DATA STORAGE, SEMICONDUCTOR;

EID: 0019048325     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20074     Document Type: Article

References (11)

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2. T. Ohgishi, T. Akiyama, and N. Enomoto, “Molybdenum gate MOS LSI for FM/AM digital frequency synthesizer receiver,” in 1978 ISSCC Dig. Tech. Papers, p. 198, Feb. 1978.
3. A. K. Sinha, T. E. Smith, T. T. Sheng, and N. N. Axelrod, “Control of resistivity, microstructure and stress in electron beam evaporated tungsten films,” J. Vac. Sci. Technol., vol. 10, p. 436, 1973.
4. P. L. Shah, “Refractory metal gate processes for VLSI applications,” IEEE Trans. Electron Devices, vol. ED-26, p. 631, Apr. 1979.
5. M. Kondo, T. Mano, H. Yanagawa, H. Kikuchi, T. Amazawa, K. Kiuchi, and H. Yoshimura, “A high speed molybdenum gate MOS RAM,” in 1978 ISSCC Dig. Tech. Papers, p. 158, Feb. 1978.
6. M. Koyanagi, T. Hayashida, N. Yamamoto, and N. Hashimoto, “Interface properties of Mo and Mo/Si gate MOS structures,” in 155th Electrochemical Soc. Meet. Abstract, vol. 79-1, p. 409, 1979.
7. F. Yanagawa, K. Kiuchi, T. Hosoya, T. Tsuchiya, T. Amazawa, and T. Mano, “1 µm Mo-Gate 64K bit MOS RAM,” in 1979 Int. Electron Devices Meet. Tech. Dig., p. 362, Dec. 1979.
8. H. Yanagawa, T. Amazawa, and H. Oikawa, “Mo-gate MOS metallization system,” in 10th Canf. Solid State Devices, Dig. Tech. Papers (Tokyo, Japan), p. 63, 1978.
9. H. Ishikawa, H. Tokunaga, N. Toyokura, and M. Shinoda, “Interface properties of Mo gate MOS structures,” in 155th Electrochemical Soc. Meet. Abstract, vol. 79-1, p. 406, 1979.
10. H. Ishikawa, H. Tokunaga, N. Toyokura, and M. Shinoda, submitted to J. Electrochem. Soc.
11. N. J. Chou, “Application of triangular voltage sweep method to mobile charge studies in MOS structures,” J. Electrochem. Soc., vol. 118, p. 601, Apr./1971.