A Technique for Suppressing Dark Current Generated by Interface States in Buried Channel CCD Imagers

IEEE Electron Device Letters

Volumn 1, Issue 7, 1980, Pages 131-133

  Saks, N S ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0019040462     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25259     Document Type: Article

References (4)

1. J. Hynecek, “Technical Digest of the International Electron Devices Meeting, Washington, D.C. Dec. 3-5, 1979,” pp. 611-614.
2. A.S. Grove and D.J. Fitzgerald, Solid-State Electron. 9, 783 (1966)
3. Devices were fabricated at Hughes Aircraft, Newport Beach, CA, and are described in greater detail by: C.P. Chang, IEEE Trans. Nucl. Sci., NS-25, 1454-1458, Dec. (1978).
4. J.M. Killiany, IEEE Trans, on Components, Hybrids, and Man. Tech., CHMT-1, 353-365, Dec. (1978)