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Journal of Applied Physics

Volumn 51, Issue 4, 1980, Pages 2153-2157

Asymmetry in the SiO2 tunneling barriers to electrons and holes

(2) Ng, K K a Card, H C a

a Columbia University ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

EID: 0019000101 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.327888 Document Type: Article

Times cited : (89)

References (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.