Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution

Journal of the Electrochemical Society

Volumn 127, Issue 2, 1980, Pages 476-483

  Unagami, Takashi ^a  

^a Musashino Electrical Communication Lab   (Japan)

Author keywords

anodization; formation mechanism; porous silicon layer

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0018984238     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129690     Document Type: Article

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