-
1
-
-
0014731307
-
Quantum size effect-present state and perspectives of experimental investigations
-
V. N. Lutskii, “Quantum size effect-present state and perspectives of experimental investigations,” Phys. Status Solidi (a), vol. 1, pp. 199-220, 1970.
-
(1970)
Phys. Status Solidi (a)
, vol.1
, pp. 199-220
-
-
Lutskii, V.N.1
-
2
-
-
0015418989
-
Quantum size effect and perspectives of its practical application
-
Oct.
-
M. I. Elinson, V. A. Volkov, V. N. Lutskii, and T. N. Pinsker, “Quantum size effect and perspectives of its practical application,” Thin Solid Films, vol. 12, pp. 383-397, Oct. 1972.
-
(1972)
Thin Solid Films
, vol.12
, pp. 383-397
-
-
Elinson, M.I.1
Volkov, V.A.2
Lutskii, V.N.3
Pinsker, T.N.4
-
3
-
-
0001597760
-
Superlattices-periodic semiconductor structures
-
Oct., also in
-
A. Ya. Shik, “Superlattices-periodic semiconductor structures,” Fiz. Tekh. Poluprovod., vol. 8, pp. 1841-1864, Oct. 1974; also in
-
(1974)
Fiz. Tekh. Poluprovod.
, vol.8
, pp. 1841-1864
-
-
Shik, A.Y.A.1
-
4
-
-
0016495637
-
-
Apr.
-
Sov. Phys. Semicond., vol. 8, pp. 1195-1209, Apr. 1975.
-
(1975)
Sov. Phys. Semicond.
, vol.8
, pp. 1195-1209
-
-
-
5
-
-
0016603377
-
Confined carrier quantum states in ultrathin semiconductor heterostructures
-
H. J. Queisser, Ed. New York: Pergamon
-
R. Dingle, “Confined carrier quantum states in ultrathin semiconductor heterostructures,” in Festkörper Probleme XV(Advances in Solid State Physics), H. J. Queisser, Ed. New York: Pergamon, 1975, pp. 21-48.
-
(1975)
Festkörper Probleme XV(Advances in Solid State Physics)
, pp. 21-48
-
-
Dingle, R.1
-
6
-
-
0013456857
-
Effective carrier mobility in surface-space charge layers
-
Feb. 1
-
J. R. Schriefier, “Effective carrier mobility in surface-space charge layers,” Phys. Rev., vol. 97, pp. 641-646, Feb. 1, 1955.
-
(1955)
Phys. Rev.
, vol.97
, pp. 641-646
-
-
Schriefier, J.R.1
-
7
-
-
34547827353
-
Properties of semiconductor surface inversion layers in the electric quantum limit
-
Nov. 15
-
F. Stem and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, pp. 816-835, Nov. 15, 1967.
-
(1967)
Phys. Rev.
, vol.163
, pp. 816-835
-
-
Stem, F.1
Howard, W.E.2
-
8
-
-
0000561484
-
Confined-carrier luminescence of a thin In1-xP1-zAsz well (x ∼ 0.13, z ∼ 0.29; ∼400 A) in an InP p-n junctions
-
Oct. 15
-
E. A. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak, Jr., “Confined-carrier luminescence of a thin In1-xP1-zAsz well (x ∼ 0.13, z ∼ 0.29; ∼400 A) in an InP p-n junctions,” Appl. Phys. Lett., vol. 31, pp. 534-536, Oct. 15, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 534-536
-
-
Rezek, E.A.1
Shichijo, H.2
Vojak, B.A.3
Holonyak, N.4
-
9
-
-
0017914974
-
Single and multiple thin layer (Lz ? 400 ?) In1-xGaxP1-zAsz-InP heterostructure light emitters and lasers (? ∼ 1.1 μm, 77°K)
-
Jan.
-
E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, and H. Shichijo, “Single and multiple thin layer (Lz ? 400 ?) In1-xGaxP1-zAsz-InP heterostructure light emitters and lasers (? ∼ 1.1 μm, 77°K),” J. Appl. Phys., vol. 49, pp. 69-74, Jan. 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 69-74
-
-
Rezek, E.A.1
Holonyak, N.2
Vojak, B.A.3
Shichijo, H.4
-
10
-
-
37949013874
-
Theory of layer structures
-
May
-
R. Fivaz, “Theory of layer structures,” J. Phys. Chem. Solids, vol. 28, pp. 839-845, May, 1967.
-
(1967)
J. Phys. Chem. Solids
, vol.28
, pp. 839-845
-
-
Fivaz, R.1
-
12
-
-
34547660866
-
Phonon-assisted recombination and stimulated emission in multiple quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructures (Lz ∼ 50Å, E1_1'-2xh?LO ? h? < EL)
-
Sept., also see
-
R. M. Kolbas, N. Holonyak, Jr., B. A. Vojak, K. Hess, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, “Phonon-assisted recombination and stimulated emission in multiple quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructures (Lz ∼ 50Å, E1_1'-2xh?LO ? h? < EL),” Solid State Commun., vol. 32, pp. 1033-1037, Sept. 1979; also see
-
(1979)
Solid State Commun.
, vol.32
, pp. 1033-1037
-
-
Kolbas, R.M.1
Holonyak, N.2
Vojak, B.A.3
Hess, K.4
Altarelli, M.5
Dupuis, R.D.6
Dapkus, P.D.7
-
13
-
-
0018986786
-
Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1-xAs-GaAs heterostructures
-
Feb.
-
N. Holonyak, Jr., R. M. Kolbas, N. D. Laidig, B. A. Vojak, K. Hess, R. D. Dupkus, and P. D. Dapkus, “Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1-xAs-GaAs heterostructures,” J. Appl. Phys., vol. 51, Feb. 1980.
-
(1980)
J. Appl. Phys.
, vol.51
-
-
Holonyak, N.1
Kolbas, R.M.2
Laidig, N.D.3
Vojak, B.A.4
Hess, K.5
Dupkus, R.D.6
Dapkus, P.D.7
-
14
-
-
0018677571
-
Preparation and properties of Ga1-xAlxAs-GaAs heterojunctions grown by metalorganic chemical vapor deposition
-
(British Inst. Phys. Conf. Series No. 45), C. M. Wolfe, Ed. London, England
-
R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, “Preparation and properties of Ga1-xAlxAs-GaAs heterojunctions grown by metalorganic chemical vapor deposition,” in Gallium Arsenide and Related Compounds 1978 (British Inst. Phys. Conf. Series No. 45), C. M. Wolfe, Ed. London, England: 1978, pp. 1-9.
-
(1978)
Gallium Arsenide and Related Compounds 1978
, pp. 1-9
-
-
Dupuis, R.D.1
Moudy, L.A.2
Dapkus, P.D.3
-
15
-
-
0018441075
-
Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
-
Mar.
-
R. D. Dupuis and P. D. Dapkus, “Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” IEEE J. Quantum Electron., vol. QE-15, pp. 128-135, Mar. 1979.
-
(1979)
IEEE J. Quantum Electron.
, vol.QE-15
, pp. 128-135
-
-
Dupuis, R.D.1
Dapkus, P.D.2
-
16
-
-
0014707790
-
Supcrlattice and negative differential conductivity in semiconductors
-
Jan.
-
L. Esaki and R. Tsu, “Supcrlattice and negative differential conductivity in semiconductors,” IBM J. Res. Dev., vol. 14, pp. 61-65, Jan. 1970.
-
(1970)
IBM J. Res. Dev.
, vol.14
, pp. 61-65
-
-
Esaki, L.1
Tsu, R.2
-
17
-
-
0016072199
-
Resonant tunneling in semiconductor double barriers
-
June 15
-
L. L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett., vol, 24, pp. 593-595, June 15, 1974.
-
(1974)
Appl. Phys. Lett.
, vol.24
, pp. 593-595
-
-
Chang, L.L.1
Esaki, L.2
Tsu, R.3
-
18
-
-
0000076421
-
New transport phenomenon in a semiconductor ‘superlattice,'
-
Aug. 19
-
L. Esaki and L. L. Chang, “New transport phenomenon in a semiconductor ‘superlattice,’” Phys. Rev. Lett., vol. 33, pp. 495-498, Aug. 19, 1974.
-
(1974)
Phys. Rev. Lett.
, vol.33
, pp. 495-498
-
-
Esaki, L.1
Chang, L.L.2
-
19
-
-
84941442071
-
-
April, private communication; see also
-
R. Tsu, Urbana, April, 1979, private communication; see also
-
(1979)
Urbana
-
-
Tsu, R.1
-
20
-
-
84941474288
-
AlxGa1-xAs-GaAs heterojunction phototransistors for fiberoptic communications
-
Ph.D. dissertation, Urbana, IL
-
R. A. Milano, “AlxGa1-xAs-GaAs heterojunction phototransistors for fiberoptic communications,” Ph.D. dissertation, Urbana, IL, 1979, pp. 88-92.
-
(1979)
, pp. 88-92
-
-
Milano, R.A.1
-
21
-
-
0000856358
-
Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures
-
Sept. 30
-
R. Dingle, W. Wiegmann, and C. H. Henry, “Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures,” Phys. Rev. Lett., vol. 33, pp. 827-830, Sept. 30, 1974.
-
(1974)
Phys. Rev. Lett.
, vol.33
, pp. 827-830
-
-
Dingle, R.1
Wiegmann, W.2
Henry, C.H.3
-
22
-
-
3743101006
-
Direct observation of superlattice formation in a semiconductor heterostructure
-
May 26
-
R. Dingle, A. C. Gossard, and W. Wiegmann, “Direct observation of superlattice formation in a semiconductor heterostructure,” Phys. Rev. Lett., vol. 34, pp. 1327-1330, May 26, 1975.
-
(1975)
Phys. Rev. Lett.
, vol.34
, pp. 1327-1330
-
-
Dingle, R.1
Gossard, A.C.2
Wiegmann, W.3
-
23
-
-
0000729854
-
Laser oscillation from quantum states in very thin GaAs-Al0.2Ga0.8As multilayer structures
-
Apr. 15
-
J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., “Laser oscillation from quantum states in very thin GaAs-Al0.2Ga0.8As multilayer structures,” Appl. Phys. Lett., vol. 26, pp. 463-465, Apr. 15, 1975.
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 463-465
-
-
van der Ziel, J.P.1
Dingle, R.2
Miller, R.C.3
Wiegmann, W.4
Nordland, W.A.5
-
24
-
-
0017006475
-
Laser oscillation with optically pumped very thin GaAs-AlxGa1-xAs multilayer structures and convential double heterostructurcs
-
Oct.
-
R. C. Miller, R. Dingle, A. C. Gossard, R. A. Logan, W. A. Nordland, Jr., and W. Wiegmann, “Laser oscillation with optically pumped very thin GaAs-AlxGa1-xAs multilayer structures and convential double heterostructurcs,” J. Appl Phys., vol. 47, pp. 4509-4517, Oct. 1976.
-
(1976)
J. Appl Phys.
, vol.47
, pp. 4509-4517
-
-
Miller, R.C.1
Dingle, R.2
Gossard, A.C.3
Logan, R.A.4
Nordland, W.A.5
Wiegmann, W.6
-
25
-
-
0343142543
-
LPE In1-xGaxP1-zAsz (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin-layer (>500 A) active region
-
Aug. 15
-
E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, and J. D. Fairing, “LPE In1-xGaxP1-zAsz (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin-layer (>500 A) active region,” Appl. Phys. Lett., vol. 31, pp. 288-290, Aug. 15, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 288-290
-
-
Rezek, E.A.1
Holonyak, N.2
Vojak, B.A.3
Stillman, G.E.4
Rossi, J.A.5
Keune, D.L.6
Fairing, J.D.7
-
26
-
-
33749570834
-
Tunnel injection into the confined-particle states of an ln1-xGaxP1-zAsz well in InP
-
Nov. 15
-
E. A.Rezek, N.Holnyak, Jr., B. A. Vojak, and H.Shichijo, “Tunnel injection into the confined-particle states of an ln1-xGaxP1-zAsz well in InP,” Appl. Phys. Lett., vol. 31, pp. 703-705, Nov. 15, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 703-705
-
-
Rezek, E.A.1
Holnyak, N.2
Vojak, B.A.3
Shichijo, H.4
-
27
-
-
0018031992
-
Bandfilling in liquid phase epitaxial InP-In1-xGaxP1-z-InP quantum-well heterostructure lasers
-
Nov.
-
E. A. Rezek, B. A. Vojak, and N. Holonyak, Jr., “Bandfilling in liquid phase epitaxial InP-In1-xGaxP1-z-InP quantum-well heterostructure lasers,” J. Appl. Phys., vol. 49, pp. 5398-5403, Nov. 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 5398-5403
-
-
Rezek, E.A.1
Vojak, B.A.2
Holonyak, N.3
-
28
-
-
0041148323
-
Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x∼0.13, z ∼ 0.29) by quantum-well luminescence
-
June 15
-
R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, “Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x∼0.13, z ∼ 0.29) by quantum-well luminescence,” Appl. Phys. Lett., vol. 34, pp. 862-864, June 15, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.34
, pp. 862-864
-
-
Chin, R.1
Holonyak, N.2
Kirchoefer, S.W.3
Kolbas, R.M.4
Rezek, E.A.5
-
29
-
-
36749111381
-
Phonon-assisted recombination in a multiple quantum-well LPE InP-In1-xGaxP1-zAsz heterostructure laser
-
July 1
-
E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, “Phonon-assisted recombination in a multiple quantum-well LPE InP-In1-xGaxP1-zAsz heterostructure laser,” Appl. Phys. Lett., vol. 35, pp. 45-47, July 1, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.35
, pp. 45-47
-
-
Rezek, E.A.1
Chin, R.2
Holonyak, N.3
Kirchoefer, S.W.4
Kolbas, R.M.5
-
30
-
-
84941463597
-
Quantum-well InP-In1-xGaxP1-zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)
-
Electron. Mater. Conf., Boulder, CO, June
-
E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas “Quantum-well InP-In1-xGaxP1-zAsz heterostructure lasers grown by liquid phase epitaxy (LPE),” Electron. Mater. Conf., Boulder, CO, June 1979
-
(1979)
-
-
Rezek, E.A.1
Chin, R.2
Holonyak, N.3
Kirchoefer, S.W.4
Kolbas, R.M.5
-
31
-
-
84941437510
-
-
Jan.
-
J. Electron. Mater., vol. 9, pp. 1-27, Jan. 1980.
-
(1980)
J. Electron. Mater.
, vol.9
, pp. 1-27
-
-
-
32
-
-
0017959831
-
Single thin active layer visible-spectrum In1_xGaxP1_zAsz heterostructure lasers
-
Apr.
-
R. Chin, N. Holonyak, Jr., R. M. Kolbas, J. A. Rossi, D. L. Keune, and W. O. Groves, “Single thin active layer visible-spectrum In1_xGaxP1_zAsz heterostructure lasers,” J. Appl. Phys., vol. 49, pp. 2551-2556, Apr. 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 2551-2556
-
-
Chin, R.1
Holonyak, N.2
Kolbas, R.M.3
Rossi, J.A.4
Keune, D.L.5
Groves, W.O.6
-
33
-
-
1642596042
-
Continuous room-temperature operation of Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition
-
Apr. 1
-
R. D. Dupuis, and P. D. Dapkus, “Continuous room-temperature operation of Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 406-407, Apr. 1, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.32
, pp. 406-407
-
-
Dupuis, R.D.1
Dapkus, P.D.2
-
34
-
-
11344290615
-
Very low threshold Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition
-
Apr. 15
-
“Very low threshold Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 473-475, Apr. 15, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.32
, pp. 473-475
-
-
-
35
-
-
33646921099
-
High energy GaAs laser operation (1.776 eV, 77°K): Bandfilling in a metalorganic chemical vapor deposition AlxGa1-xAs-GaAs quantum-well heterostructure
-
Jan. 26, also in
-
R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, “High energy GaAs laser operation (1.776 eV, 77°K): Bandfilling in a metalorganic chemical vapor deposition AlxGa1-xAs-GaAs quantum-well heterostructure,” Pis'ma v Zh. Tekh. Fiz., vol. 4, pp. 69-73, Jan. 26, 1978; also in
-
(1978)
Pis'ma v Zh. Tekh. Fiz.
, vol.4
, pp. 69-73
-
-
Kolbas, R.M.1
Holonyak, N.2
Dupuis, R.D.3
Dapkus, P.D.4
-
36
-
-
33646900678
-
-
Jan.
-
Sov. Tech. Phys. Lett., vol. 4, pp. 28-30, Jan. 1978.
-
(1978)
Sov. Tech. Phys. Lett.
, vol.4
, pp. 28-30
-
-
-
37
-
-
0000793631
-
Room-temperature laser operation of quantum-well Ga1-xAsxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition
-
Mar. 1
-
R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, “Room-temperature laser operation of quantum-well Ga1-xAsxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 295-297, Mar. 1, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.32
, pp. 295-297
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Holonyak, N.3
Rezek, E.A.4
Chin, R.5
-
38
-
-
11344258864
-
Room-temperature continuous operation of photopumped MO-CVD AlxGaj_xAs-GaAs-AlxGa1_xAs quantum-well lasers
-
July 1
-
N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Room-temperature continuous operation of photopumped MO-CVD AlxGaj_xAs-GaAs-AlxGa1_xAs quantum-well lasers,” Appl. Phys. Lett., vol. 33, pp. 73-75, July 1, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 73-75
-
-
Holonyak, N.1
Kolbas, R.M.2
Dupuis, R.D.3
Dapkus, P.D.4
-
39
-
-
0017997967
-
Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz ∼ 100 A)
-
Aug.
-
R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., “Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz ∼ 100 A),” Solid State Commun., vol. 27, pp. 531-533, Aug. 1978.
-
(1978)
Solid State Commun.
, vol.27
, pp. 531-533
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Kolbas, R.M.3
Holonyak, N.4
-
40
-
-
0018008616
-
Carrier collection in a semiconductor quantum well
-
Sept.
-
H. Shichijo, R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, “Carrier collection in a semiconductor quantum well,” Solid State Commun., vol. 27, pp. 1029-1032, Sept. 1978.
-
(1978)
Solid State Commun.
, vol.27
, pp. 1029-1032
-
-
Shichijo, H.1
Kolbas, R.M.2
Holonyak, N.3
Dupuis, R.D.4
Dapkus, P.D.5
-
41
-
-
36749112511
-
Photopumped laser operation of MO-CVD AlxGa1_xAs near a GaAs quantum well (??6200 A, 77oK)
-
Oct. 1
-
R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, N. Holonyak, Jr., and H. Shichijo, “Photopumped laser operation of MO-CVD AlxGa1_xAs near a GaAs quantum well (??6200 A, 77oK),” Appl. Phys. Lett., vol. 33, pp. 596-598, Oct. 1, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 596-598
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Kolbas, R.M.3
Holonyak, N.4
Shichijo, H.5
-
42
-
-
11344264607
-
Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1_xAs-GaAs quantum-well heterostructures
-
Oct. 15
-
N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, “Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1_xAs-GaAs quantum-well heterostructures,” Appl. Phys. Lett., vol. 33, pp. 737-739, Oct. 15, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 737-739
-
-
Holonyak, N.1
Kolbas, R.M.2
Laidig, W.D.3
Vojak, B.A.4
Dupuis, R.D.5
Dapkus, P.D.6
-
43
-
-
0018035526
-
Bandfilling in metalorganic chemical vapor deposited AlxGa1_xAs-GaAs-AlxGa1_xAs quantum-well heterojunction lasers
-
Nov.
-
N. Holonyak, Jr., R. M. Kolbas, E. A. Rezek, R. Chin, R. D. Dupuis, and P. D. Dapkus, “Bandfilling in metalorganic chemical vapor deposited AlxGa1_xAs-GaAs-AlxGa1_xAs quantum-well heterojunction lasers,” J. Appl. Phys., vol. 49, pp. 5392-5397, Nov. 1978.
-
(1978)
J. Appl. Phys.
, vol.49
, pp. 5392-5397
-
-
Holonyak, N.1
Kolbas, R.M.2
Rezek, E.A.3
Chin, R.4
Dupuis, R.D.5
Dapkus, P.D.6
-
44
-
-
84941477765
-
MO-CVD quantum-well AlxGa1_xAs-GaAs heterostructure lasers
-
presented at the 7th Int. Symp. on GaAs and Related Compounds, Sept. 24-27, St. Louis, MO, Sept. 24-27, in
-
N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, “MO-CVD quantum-well AlxGa1_xAs-GaAs heterostructure lasers,” presented at the 7th Int. Symp. on GaAs and Related Compounds, Sept. 24-27, St. Louis, MO, Sept. 24-27, 1978 in
-
(1978)
-
-
Holonyak, N.1
Kolbas, R.M.2
Laidig, W.D.3
Vojak, B.A.4
Dupuis, R.D.5
Dapkus, P.D.6
-
45
-
-
84931222850
-
-
C. M. Wolfe Ed, (Institute Phys. Conf. Series No. 45, London, 1979)
-
Gallium Arsenide and Related Compounds, C. M. Wolfe Ed. 1978, (Institute Phys. Conf. Series No. 45, London, 1979), pp. 387-395.
-
(1978)
Gallium Arsenide and Related Compounds
, pp. 387-395
-
-
-
46
-
-
0040019964
-
Room-temperature high-energy continuous laser operation of metalorganic chemical vapor deposited AlxGa1_xAs-GaAs quantum-well heterostructures
-
Feb. 12, also in
-
R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, and B. A. Vojak, “Room-temperature high-energy continuous laser operation of metalorganic chemical vapor deposited AlxGa1_xAs-GaAs quantum-well heterostructures,” Pis'ma v Zh. Tekh. Fiz., vol. 5, pp. 132-139, Feb. 12, 1979;also in
-
(1979)
Pis'ma v Zh. Tekh. Fiz.
, vol.5
, pp. 132-139
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Holonyak, N.3
Kolbas, R.M.4
Laidig, W.D.5
Vojak, B.A.6
-
47
-
-
84941438222
-
-
Feb.
-
Sov. Tech. Phys. Lett., vol. 5, pp. 52-54, Feb. 1979.
-
(1979)
Sov. Tech. Phys. Lett.
, vol.5
, pp. 52-54
-
-
-
48
-
-
11344275805
-
Continuous 300°K laser operation of singlequantum-well AlxGa1_xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
-
Feb. 15
-
R. D. Dupuis, P. D. Dapkus, R. Chin, N. Holonyak, Jr., and S. W. Kirchoefer, “Continuous 300°K laser operation of singlequantum-well AlxGa1_xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 34, pp. 265-267, Feb. 15, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.34
, pp. 265-267
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Chin, R.3
Holonyak, N.4
Kirchoefer, S.W.5
-
49
-
-
0018454583
-
Bevel cross-sectioning of ultrathin (∼100 A) III-V semiconductor layers
-
Apr.
-
N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Bevel cross-sectioning of ultrathin (∼100 A) III-V semiconductor layers,” Solid State Electron., vol. 22, pp. 431-433, Apr. 1979. ‘
-
(1979)
Solid State Electron.
, vol.22
, pp. 431-433
-
-
Holonyak, N.1
Vojak, B.A.2
Kolbas, R.M.3
Dupuis, R.D.4
Dapkus, P.D.5
-
50
-
-
11344291762
-
Phonon-sideband MO-CVD quantum-well AlxGa1 _xAs-GaAs heterostructure laser
-
Apr. 15
-
N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, “Phonon-sideband MO-CVD quantum-well AlxGa1 _xAs-GaAs heterostructure laser,” Appl. Phys. Lett., vol. 34, pp. 502-505, Apr. 15, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.34
, pp. 502-505
-
-
Holonyak, N.1
Kolbas, R.M.2
Laidig, W.D.3
Altarelli, M.4
Dupuis, R.D.5
Dapkus, P.D.6
-
51
-
-
0018004626
-
Quantum-well AlxGa1As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
-
Aug.
-
R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., “Quantum-well AlxGa1As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” IEEE J. Quantum Electron., vol. QE-15, pp. 756-761, Aug. 1979.
-
(1979)
IEEE J. Quantum Electron.
, vol.QE-15
, pp. 756-761
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Kolbas, R.M.3
Holonyak, N.4
-
52
-
-
0018515741
-
Low temperature operation of multiple quantum-well AlxGa1_xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
-
Sept.
-
B. A. Vojak, S. W. Kirchoefer, N. Holonyak, Jr., R. Chin, R. D. Dupuis, and P. D. Dapkus, “Low temperature operation of multiple quantum-well AlxGa1_xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition,” J. Appl. Phys., vol. 50, pp. 5830-5834, Sept. 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 5830-5834
-
-
Vojak, B.A.1
Kirchoefer, S.W.2
Holonyak, N.3
Chin, R.4
Dupuis, R.D.5
Dapkus, P.D.6
-
53
-
-
0018516096
-
Tunnel injection and phonon-assisted recombination in multiple quantum-well AIxGa1As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
-
Sept. 1
-
B. A. Vojak, N. Holonyak, Jr., R. Chin, E. A. Rezek, R. D. Dupuis, and P. D. Dapkus, “Tunnel injection and phonon-assisted recombination in multiple quantum-well AIxGa1As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition,” J. Appl. Phys., vol. 50, pp. 5835-5840, Sept. 1, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 5835-5840
-
-
Vojak, B.A.1
Holonyak, N.2
Chin, R.3
Rezek, E.A.4
Dupuis, R.D.5
Dapkus, P.D.6
-
54
-
-
11344268067
-
Continuous room-temperature multiple-quantum-well AlxGa1_xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition
-
Oct. 1
-
R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., and R. M. Kolbas, “Continuous room-temperature multiple-quantum-well AlxGa1_xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 35, pp. 487-489, Oct. 1, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.35
, pp. 487-489
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Holonyak, N.3
Kolbas, R.M.4
-
55
-
-
36749105334
-
Abrupt Ga1_xAIxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition
-
Mar. 1
-
R. D. Dupuis, P. D. Dapkus, C. M. Garner, C. Y. Su, and W. E. Spicer, “Abrupt Ga1_xAIxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 34, pp. 335-337, Mar. 1, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.34
, pp. 335-337
-
-
Dupuis, R.D.1
Dapkus, P.D.2
Garner, C.M.3
Su, C.Y.4
Spicer, W.E.5
-
56
-
-
0015669883
-
Optical waveguides in GaAs-AlGaAs epitaxial layers
-
Sept.
-
R. A. Logan and F. K. Reinhart, “Optical waveguides in GaAs-AlGaAs epitaxial layers,” J. Appl Phys., vol. 44, pp. 4172-4176, Sept. 1973.
-
(1973)
J. Appl Phys.
, vol.44
, pp. 4172-4176
-
-
Logan, R.A.1
Reinhart, F.K.2
-
57
-
-
0015205978
-
Window heat sink sandwich for optical experiments: Diamond (or sapphire)-semiconductor-indium sandwich
-
Dec.
-
N. Holonyak, Jr., and D. R. Scifres, “Window heat sink sandwich for optical experiments: Diamond (or sapphire)-semiconductor-indium sandwich,” Rev. Sci. Instr., vol. 42, pp. 1885-1886, Dec. 1971.
-
(1971)
Rev. Sci. Instr.
, vol.42
, pp. 1885-1886
-
-
Holonyak, N.1
Scifres, D.R.2
-
58
-
-
0003508607
-
-
Chicago, IL: Univ. Chicago Press
-
E. Fermi, Nuclear Physics. Chicago, IL: Univ. Chicago Press, 1950, pp. 187-191.
-
(1950)
Nuclear Physics
, pp. 187-191
-
-
Fermi, E.1
-
59
-
-
36149021685
-
Mechanism of excition-enhanced photoelectric emission in alkali halides
-
Mar. 1
-
M. H. Hebb, “Mechanism of excition-enhanced photoelectric emission in alkali halides,” Phys. Rev., vol. 81, pp. 702-705, Mar. 1, 1951.
-
(1951)
Phys. Rev.
, vol.81
, pp. 702-705
-
-
Hebb, M.H.1
-
60
-
-
0015753929
-
Calculated energy distribution of electrons emitted from negative electron affinity GaAs:Cs-0 surfaces
-
Dec.
-
J. S. Escher and H. Schade, “Calculated energy distribution of electrons emitted from negative electron affinity GaAs:Cs-0 surfaces,” J. Appl. Phys., vol. 44, pp. 5309-5313, Dec. 1973.
-
(1973)
J. Appl. Phys.
, vol.44
, pp. 5309-5313
-
-
Escher, J.S.1
Schade, H.2
-
61
-
-
0014538291
-
Transport properties of GaAs obtained from photoemission measurements
-
July 15
-
L. W. James and J. L. Moll, “Transport properties of GaAs obtained from photoemission measurements,” Phys. Rev., vol. 183, pp. 740-753, July 15, 1969.
-
(1969)
Phys. Rev.
, vol.183
, pp. 740-753
-
-
James, L.W.1
Moll, J.L.2
-
62
-
-
36749116988
-
700-hours continuous room-temperature operation of AlxGa1_xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
-
Aug. 15
-
R. D. Dupuis, “700-hours continuous room-temperature operation of AlxGa1_xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 35, pp. 311-314, Aug. 15, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.35
, pp. 311-314
-
-
Dupuis, R.D.1
-
63
-
-
0012266823
-
Temperature dependence of threshold current for quantum-well AlxGa1_vAs-GaAs heterostructure laser diodes
-
Jan. 1
-
R. Chin, N. Holonyak, Jr., B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, “Temperature dependence of threshold current for quantum-well AlxGa1_vAs-GaAs heterostructure laser diodes,” appl. Phys. Lett., vol. 36, pp. 19-21, Jan. 1, 1980.
-
(1980)
appl. Phys. Lett.
, vol.36
, pp. 19-21
-
-
Chin, R.1
Holonyak, N.2
Vojak, B.A.3
Hess, K.4
Dupuis, R.D.5
Dapkus, P.D.6
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