메뉴 건너뛰기




Volumn 16, Issue 2, 1980, Pages 170-186

Quantum-Well Heterostructure Lasers

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0018983630     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1980.1070447     Document Type: Article
Times cited : (445)

References (63)
  • 1
    • 0014731307 scopus 로고
    • Quantum size effect-present state and perspectives of experimental investigations
    • V. N. Lutskii, “Quantum size effect-present state and perspectives of experimental investigations,” Phys. Status Solidi (a), vol. 1, pp. 199-220, 1970.
    • (1970) Phys. Status Solidi (a) , vol.1 , pp. 199-220
    • Lutskii, V.N.1
  • 2
    • 0015418989 scopus 로고
    • Quantum size effect and perspectives of its practical application
    • Oct.
    • M. I. Elinson, V. A. Volkov, V. N. Lutskii, and T. N. Pinsker, “Quantum size effect and perspectives of its practical application,” Thin Solid Films, vol. 12, pp. 383-397, Oct. 1972.
    • (1972) Thin Solid Films , vol.12 , pp. 383-397
    • Elinson, M.I.1    Volkov, V.A.2    Lutskii, V.N.3    Pinsker, T.N.4
  • 3
    • 0001597760 scopus 로고
    • Superlattices-periodic semiconductor structures
    • Oct., also in
    • A. Ya. Shik, “Superlattices-periodic semiconductor structures,” Fiz. Tekh. Poluprovod., vol. 8, pp. 1841-1864, Oct. 1974; also in
    • (1974) Fiz. Tekh. Poluprovod. , vol.8 , pp. 1841-1864
    • Shik, A.Y.A.1
  • 4
    • 0016495637 scopus 로고
    • Apr.
    • Sov. Phys. Semicond., vol. 8, pp. 1195-1209, Apr. 1975.
    • (1975) Sov. Phys. Semicond. , vol.8 , pp. 1195-1209
  • 5
    • 0016603377 scopus 로고
    • Confined carrier quantum states in ultrathin semiconductor heterostructures
    • H. J. Queisser, Ed. New York: Pergamon
    • R. Dingle, “Confined carrier quantum states in ultrathin semiconductor heterostructures,” in Festkörper Probleme XV(Advances in Solid State Physics), H. J. Queisser, Ed. New York: Pergamon, 1975, pp. 21-48.
    • (1975) Festkörper Probleme XV(Advances in Solid State Physics) , pp. 21-48
    • Dingle, R.1
  • 6
    • 0013456857 scopus 로고
    • Effective carrier mobility in surface-space charge layers
    • Feb. 1
    • J. R. Schriefier, “Effective carrier mobility in surface-space charge layers,” Phys. Rev., vol. 97, pp. 641-646, Feb. 1, 1955.
    • (1955) Phys. Rev. , vol.97 , pp. 641-646
    • Schriefier, J.R.1
  • 7
    • 34547827353 scopus 로고
    • Properties of semiconductor surface inversion layers in the electric quantum limit
    • Nov. 15
    • F. Stem and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, pp. 816-835, Nov. 15, 1967.
    • (1967) Phys. Rev. , vol.163 , pp. 816-835
    • Stem, F.1    Howard, W.E.2
  • 8
    • 0000561484 scopus 로고
    • Confined-carrier luminescence of a thin In1-xP1-zAsz well (x ∼ 0.13, z ∼ 0.29; ∼400 A) in an InP p-n junctions
    • Oct. 15
    • E. A. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak, Jr., “Confined-carrier luminescence of a thin In1-xP1-zAsz well (x ∼ 0.13, z ∼ 0.29; ∼400 A) in an InP p-n junctions,” Appl. Phys. Lett., vol. 31, pp. 534-536, Oct. 15, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 534-536
    • Rezek, E.A.1    Shichijo, H.2    Vojak, B.A.3    Holonyak, N.4
  • 9
    • 0017914974 scopus 로고
    • Single and multiple thin layer (Lz ? 400 ?) In1-xGaxP1-zAsz-InP heterostructure light emitters and lasers (? ∼ 1.1 μm, 77°K)
    • Jan.
    • E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, and H. Shichijo, “Single and multiple thin layer (Lz ? 400 ?) In1-xGaxP1-zAsz-InP heterostructure light emitters and lasers (? ∼ 1.1 μm, 77°K),” J. Appl. Phys., vol. 49, pp. 69-74, Jan. 1978.
    • (1978) J. Appl. Phys. , vol.49 , pp. 69-74
    • Rezek, E.A.1    Holonyak, N.2    Vojak, B.A.3    Shichijo, H.4
  • 10
    • 37949013874 scopus 로고
    • Theory of layer structures
    • May
    • R. Fivaz, “Theory of layer structures,” J. Phys. Chem. Solids, vol. 28, pp. 839-845, May, 1967.
    • (1967) J. Phys. Chem. Solids , vol.28 , pp. 839-845
    • Fivaz, R.1
  • 12
    • 34547660866 scopus 로고
    • Phonon-assisted recombination and stimulated emission in multiple quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructures (Lz ∼ 50Å, E1_1'-2xh?LO ? h? < EL)
    • Sept., also see
    • R. M. Kolbas, N. Holonyak, Jr., B. A. Vojak, K. Hess, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, “Phonon-assisted recombination and stimulated emission in multiple quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructures (Lz ∼ 50Å, E1_1'-2xh?LO ? h? < EL),” Solid State Commun., vol. 32, pp. 1033-1037, Sept. 1979; also see
    • (1979) Solid State Commun. , vol.32 , pp. 1033-1037
    • Kolbas, R.M.1    Holonyak, N.2    Vojak, B.A.3    Hess, K.4    Altarelli, M.5    Dupuis, R.D.6    Dapkus, P.D.7
  • 13
    • 0018986786 scopus 로고
    • Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1-xAs-GaAs heterostructures
    • Feb.
    • N. Holonyak, Jr., R. M. Kolbas, N. D. Laidig, B. A. Vojak, K. Hess, R. D. Dupkus, and P. D. Dapkus, “Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1-xAs-GaAs heterostructures,” J. Appl. Phys., vol. 51, Feb. 1980.
    • (1980) J. Appl. Phys. , vol.51
    • Holonyak, N.1    Kolbas, R.M.2    Laidig, N.D.3    Vojak, B.A.4    Hess, K.5    Dupkus, R.D.6    Dapkus, P.D.7
  • 14
    • 0018677571 scopus 로고
    • Preparation and properties of Ga1-xAlxAs-GaAs heterojunctions grown by metalorganic chemical vapor deposition
    • (British Inst. Phys. Conf. Series No. 45), C. M. Wolfe, Ed. London, England
    • R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, “Preparation and properties of Ga1-xAlxAs-GaAs heterojunctions grown by metalorganic chemical vapor deposition,” in Gallium Arsenide and Related Compounds 1978 (British Inst. Phys. Conf. Series No. 45), C. M. Wolfe, Ed. London, England: 1978, pp. 1-9.
    • (1978) Gallium Arsenide and Related Compounds 1978 , pp. 1-9
    • Dupuis, R.D.1    Moudy, L.A.2    Dapkus, P.D.3
  • 15
    • 0018441075 scopus 로고
    • Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
    • Mar.
    • R. D. Dupuis and P. D. Dapkus, “Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” IEEE J. Quantum Electron., vol. QE-15, pp. 128-135, Mar. 1979.
    • (1979) IEEE J. Quantum Electron. , vol.QE-15 , pp. 128-135
    • Dupuis, R.D.1    Dapkus, P.D.2
  • 16
    • 0014707790 scopus 로고
    • Supcrlattice and negative differential conductivity in semiconductors
    • Jan.
    • L. Esaki and R. Tsu, “Supcrlattice and negative differential conductivity in semiconductors,” IBM J. Res. Dev., vol. 14, pp. 61-65, Jan. 1970.
    • (1970) IBM J. Res. Dev. , vol.14 , pp. 61-65
    • Esaki, L.1    Tsu, R.2
  • 17
    • 0016072199 scopus 로고
    • Resonant tunneling in semiconductor double barriers
    • June 15
    • L. L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett., vol, 24, pp. 593-595, June 15, 1974.
    • (1974) Appl. Phys. Lett. , vol.24 , pp. 593-595
    • Chang, L.L.1    Esaki, L.2    Tsu, R.3
  • 18
    • 0000076421 scopus 로고
    • New transport phenomenon in a semiconductor ‘superlattice,'
    • Aug. 19
    • L. Esaki and L. L. Chang, “New transport phenomenon in a semiconductor ‘superlattice,’” Phys. Rev. Lett., vol. 33, pp. 495-498, Aug. 19, 1974.
    • (1974) Phys. Rev. Lett. , vol.33 , pp. 495-498
    • Esaki, L.1    Chang, L.L.2
  • 19
    • 84941442071 scopus 로고
    • April, private communication; see also
    • R. Tsu, Urbana, April, 1979, private communication; see also
    • (1979) Urbana
    • Tsu, R.1
  • 20
    • 84941474288 scopus 로고
    • AlxGa1-xAs-GaAs heterojunction phototransistors for fiberoptic communications
    • Ph.D. dissertation, Urbana, IL
    • R. A. Milano, “AlxGa1-xAs-GaAs heterojunction phototransistors for fiberoptic communications,” Ph.D. dissertation, Urbana, IL, 1979, pp. 88-92.
    • (1979) , pp. 88-92
    • Milano, R.A.1
  • 21
    • 0000856358 scopus 로고
    • Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures
    • Sept. 30
    • R. Dingle, W. Wiegmann, and C. H. Henry, “Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures,” Phys. Rev. Lett., vol. 33, pp. 827-830, Sept. 30, 1974.
    • (1974) Phys. Rev. Lett. , vol.33 , pp. 827-830
    • Dingle, R.1    Wiegmann, W.2    Henry, C.H.3
  • 22
    • 3743101006 scopus 로고
    • Direct observation of superlattice formation in a semiconductor heterostructure
    • May 26
    • R. Dingle, A. C. Gossard, and W. Wiegmann, “Direct observation of superlattice formation in a semiconductor heterostructure,” Phys. Rev. Lett., vol. 34, pp. 1327-1330, May 26, 1975.
    • (1975) Phys. Rev. Lett. , vol.34 , pp. 1327-1330
    • Dingle, R.1    Gossard, A.C.2    Wiegmann, W.3
  • 23
    • 0000729854 scopus 로고
    • Laser oscillation from quantum states in very thin GaAs-Al0.2Ga0.8As multilayer structures
    • Apr. 15
    • J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., “Laser oscillation from quantum states in very thin GaAs-Al0.2Ga0.8As multilayer structures,” Appl. Phys. Lett., vol. 26, pp. 463-465, Apr. 15, 1975.
    • (1975) Appl. Phys. Lett. , vol.26 , pp. 463-465
    • van der Ziel, J.P.1    Dingle, R.2    Miller, R.C.3    Wiegmann, W.4    Nordland, W.A.5
  • 24
    • 0017006475 scopus 로고
    • Laser oscillation with optically pumped very thin GaAs-AlxGa1-xAs multilayer structures and convential double heterostructurcs
    • Oct.
    • R. C. Miller, R. Dingle, A. C. Gossard, R. A. Logan, W. A. Nordland, Jr., and W. Wiegmann, “Laser oscillation with optically pumped very thin GaAs-AlxGa1-xAs multilayer structures and convential double heterostructurcs,” J. Appl Phys., vol. 47, pp. 4509-4517, Oct. 1976.
    • (1976) J. Appl Phys. , vol.47 , pp. 4509-4517
    • Miller, R.C.1    Dingle, R.2    Gossard, A.C.3    Logan, R.A.4    Nordland, W.A.5    Wiegmann, W.6
  • 25
    • 0343142543 scopus 로고
    • LPE In1-xGaxP1-zAsz (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin-layer (>500 A) active region
    • Aug. 15
    • E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, and J. D. Fairing, “LPE In1-xGaxP1-zAsz (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin-layer (>500 A) active region,” Appl. Phys. Lett., vol. 31, pp. 288-290, Aug. 15, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 288-290
    • Rezek, E.A.1    Holonyak, N.2    Vojak, B.A.3    Stillman, G.E.4    Rossi, J.A.5    Keune, D.L.6    Fairing, J.D.7
  • 26
    • 33749570834 scopus 로고
    • Tunnel injection into the confined-particle states of an ln1-xGaxP1-zAsz well in InP
    • Nov. 15
    • E. A.Rezek, N.Holnyak, Jr., B. A. Vojak, and H.Shichijo, “Tunnel injection into the confined-particle states of an ln1-xGaxP1-zAsz well in InP,” Appl. Phys. Lett., vol. 31, pp. 703-705, Nov. 15, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 703-705
    • Rezek, E.A.1    Holnyak, N.2    Vojak, B.A.3    Shichijo, H.4
  • 27
    • 0018031992 scopus 로고
    • Bandfilling in liquid phase epitaxial InP-In1-xGaxP1-z-InP quantum-well heterostructure lasers
    • Nov.
    • E. A. Rezek, B. A. Vojak, and N. Holonyak, Jr., “Bandfilling in liquid phase epitaxial InP-In1-xGaxP1-z-InP quantum-well heterostructure lasers,” J. Appl. Phys., vol. 49, pp. 5398-5403, Nov. 1978.
    • (1978) J. Appl. Phys. , vol.49 , pp. 5398-5403
    • Rezek, E.A.1    Vojak, B.A.2    Holonyak, N.3
  • 28
    • 0041148323 scopus 로고
    • Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x∼0.13, z ∼ 0.29) by quantum-well luminescence
    • June 15
    • R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, “Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x∼0.13, z ∼ 0.29) by quantum-well luminescence,” Appl. Phys. Lett., vol. 34, pp. 862-864, June 15, 1979.
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 862-864
    • Chin, R.1    Holonyak, N.2    Kirchoefer, S.W.3    Kolbas, R.M.4    Rezek, E.A.5
  • 29
    • 36749111381 scopus 로고
    • Phonon-assisted recombination in a multiple quantum-well LPE InP-In1-xGaxP1-zAsz heterostructure laser
    • July 1
    • E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, “Phonon-assisted recombination in a multiple quantum-well LPE InP-In1-xGaxP1-zAsz heterostructure laser,” Appl. Phys. Lett., vol. 35, pp. 45-47, July 1, 1979.
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 45-47
    • Rezek, E.A.1    Chin, R.2    Holonyak, N.3    Kirchoefer, S.W.4    Kolbas, R.M.5
  • 30
    • 84941463597 scopus 로고
    • Quantum-well InP-In1-xGaxP1-zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)
    • Electron. Mater. Conf., Boulder, CO, June
    • E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas “Quantum-well InP-In1-xGaxP1-zAsz heterostructure lasers grown by liquid phase epitaxy (LPE),” Electron. Mater. Conf., Boulder, CO, June 1979
    • (1979)
    • Rezek, E.A.1    Chin, R.2    Holonyak, N.3    Kirchoefer, S.W.4    Kolbas, R.M.5
  • 31
    • 84941437510 scopus 로고
    • Jan.
    • J. Electron. Mater., vol. 9, pp. 1-27, Jan. 1980.
    • (1980) J. Electron. Mater. , vol.9 , pp. 1-27
  • 32
    • 0017959831 scopus 로고
    • Single thin active layer visible-spectrum In1_xGaxP1_zAsz heterostructure lasers
    • Apr.
    • R. Chin, N. Holonyak, Jr., R. M. Kolbas, J. A. Rossi, D. L. Keune, and W. O. Groves, “Single thin active layer visible-spectrum In1_xGaxP1_zAsz heterostructure lasers,” J. Appl. Phys., vol. 49, pp. 2551-2556, Apr. 1978.
    • (1978) J. Appl. Phys. , vol.49 , pp. 2551-2556
    • Chin, R.1    Holonyak, N.2    Kolbas, R.M.3    Rossi, J.A.4    Keune, D.L.5    Groves, W.O.6
  • 33
    • 1642596042 scopus 로고
    • Continuous room-temperature operation of Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition
    • Apr. 1
    • R. D. Dupuis, and P. D. Dapkus, “Continuous room-temperature operation of Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 406-407, Apr. 1, 1978.
    • (1978) Appl. Phys. Lett. , vol.32 , pp. 406-407
    • Dupuis, R.D.1    Dapkus, P.D.2
  • 34
    • 11344290615 scopus 로고
    • Very low threshold Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition
    • Apr. 15
    • “Very low threshold Ga1-xAlxAs-GaAs doubleheterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 473-475, Apr. 15, 1978.
    • (1978) Appl. Phys. Lett. , vol.32 , pp. 473-475
  • 35
    • 33646921099 scopus 로고
    • High energy GaAs laser operation (1.776 eV, 77°K): Bandfilling in a metalorganic chemical vapor deposition AlxGa1-xAs-GaAs quantum-well heterostructure
    • Jan. 26, also in
    • R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, “High energy GaAs laser operation (1.776 eV, 77°K): Bandfilling in a metalorganic chemical vapor deposition AlxGa1-xAs-GaAs quantum-well heterostructure,” Pis'ma v Zh. Tekh. Fiz., vol. 4, pp. 69-73, Jan. 26, 1978; also in
    • (1978) Pis'ma v Zh. Tekh. Fiz. , vol.4 , pp. 69-73
    • Kolbas, R.M.1    Holonyak, N.2    Dupuis, R.D.3    Dapkus, P.D.4
  • 36
    • 33646900678 scopus 로고
    • Jan.
    • Sov. Tech. Phys. Lett., vol. 4, pp. 28-30, Jan. 1978.
    • (1978) Sov. Tech. Phys. Lett. , vol.4 , pp. 28-30
  • 37
    • 0000793631 scopus 로고
    • Room-temperature laser operation of quantum-well Ga1-xAsxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition
    • Mar. 1
    • R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, “Room-temperature laser operation of quantum-well Ga1-xAsxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 295-297, Mar. 1, 1978.
    • (1978) Appl. Phys. Lett. , vol.32 , pp. 295-297
    • Dupuis, R.D.1    Dapkus, P.D.2    Holonyak, N.3    Rezek, E.A.4    Chin, R.5
  • 38
    • 11344258864 scopus 로고
    • Room-temperature continuous operation of photopumped MO-CVD AlxGaj_xAs-GaAs-AlxGa1_xAs quantum-well lasers
    • July 1
    • N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Room-temperature continuous operation of photopumped MO-CVD AlxGaj_xAs-GaAs-AlxGa1_xAs quantum-well lasers,” Appl. Phys. Lett., vol. 33, pp. 73-75, July 1, 1978.
    • (1978) Appl. Phys. Lett. , vol.33 , pp. 73-75
    • Holonyak, N.1    Kolbas, R.M.2    Dupuis, R.D.3    Dapkus, P.D.4
  • 39
    • 0017997967 scopus 로고
    • Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz ∼ 100 A)
    • Aug.
    • R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., “Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz ∼ 100 A),” Solid State Commun., vol. 27, pp. 531-533, Aug. 1978.
    • (1978) Solid State Commun. , vol.27 , pp. 531-533
    • Dupuis, R.D.1    Dapkus, P.D.2    Kolbas, R.M.3    Holonyak, N.4
  • 41
    • 36749112511 scopus 로고
    • Photopumped laser operation of MO-CVD AlxGa1_xAs near a GaAs quantum well (??6200 A, 77oK)
    • Oct. 1
    • R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, N. Holonyak, Jr., and H. Shichijo, “Photopumped laser operation of MO-CVD AlxGa1_xAs near a GaAs quantum well (??6200 A, 77oK),” Appl. Phys. Lett., vol. 33, pp. 596-598, Oct. 1, 1978.
    • (1978) Appl. Phys. Lett. , vol.33 , pp. 596-598
    • Dupuis, R.D.1    Dapkus, P.D.2    Kolbas, R.M.3    Holonyak, N.4    Shichijo, H.5
  • 42
    • 11344264607 scopus 로고
    • Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1_xAs-GaAs quantum-well heterostructures
    • Oct. 15
    • N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, “Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1_xAs-GaAs quantum-well heterostructures,” Appl. Phys. Lett., vol. 33, pp. 737-739, Oct. 15, 1978.
    • (1978) Appl. Phys. Lett. , vol.33 , pp. 737-739
    • Holonyak, N.1    Kolbas, R.M.2    Laidig, W.D.3    Vojak, B.A.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 43
    • 0018035526 scopus 로고
    • Bandfilling in metalorganic chemical vapor deposited AlxGa1_xAs-GaAs-AlxGa1_xAs quantum-well heterojunction lasers
    • Nov.
    • N. Holonyak, Jr., R. M. Kolbas, E. A. Rezek, R. Chin, R. D. Dupuis, and P. D. Dapkus, “Bandfilling in metalorganic chemical vapor deposited AlxGa1_xAs-GaAs-AlxGa1_xAs quantum-well heterojunction lasers,” J. Appl. Phys., vol. 49, pp. 5392-5397, Nov. 1978.
    • (1978) J. Appl. Phys. , vol.49 , pp. 5392-5397
    • Holonyak, N.1    Kolbas, R.M.2    Rezek, E.A.3    Chin, R.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 44
    • 84941477765 scopus 로고
    • MO-CVD quantum-well AlxGa1_xAs-GaAs heterostructure lasers
    • presented at the 7th Int. Symp. on GaAs and Related Compounds, Sept. 24-27, St. Louis, MO, Sept. 24-27, in
    • N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, “MO-CVD quantum-well AlxGa1_xAs-GaAs heterostructure lasers,” presented at the 7th Int. Symp. on GaAs and Related Compounds, Sept. 24-27, St. Louis, MO, Sept. 24-27, 1978 in
    • (1978)
    • Holonyak, N.1    Kolbas, R.M.2    Laidig, W.D.3    Vojak, B.A.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 45
    • 84931222850 scopus 로고
    • C. M. Wolfe Ed, (Institute Phys. Conf. Series No. 45, London, 1979)
    • Gallium Arsenide and Related Compounds, C. M. Wolfe Ed. 1978, (Institute Phys. Conf. Series No. 45, London, 1979), pp. 387-395.
    • (1978) Gallium Arsenide and Related Compounds , pp. 387-395
  • 46
    • 0040019964 scopus 로고
    • Room-temperature high-energy continuous laser operation of metalorganic chemical vapor deposited AlxGa1_xAs-GaAs quantum-well heterostructures
    • Feb. 12, also in
    • R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, and B. A. Vojak, “Room-temperature high-energy continuous laser operation of metalorganic chemical vapor deposited AlxGa1_xAs-GaAs quantum-well heterostructures,” Pis'ma v Zh. Tekh. Fiz., vol. 5, pp. 132-139, Feb. 12, 1979;also in
    • (1979) Pis'ma v Zh. Tekh. Fiz. , vol.5 , pp. 132-139
    • Dupuis, R.D.1    Dapkus, P.D.2    Holonyak, N.3    Kolbas, R.M.4    Laidig, W.D.5    Vojak, B.A.6
  • 47
    • 84941438222 scopus 로고
    • Feb.
    • Sov. Tech. Phys. Lett., vol. 5, pp. 52-54, Feb. 1979.
    • (1979) Sov. Tech. Phys. Lett. , vol.5 , pp. 52-54
  • 48
    • 11344275805 scopus 로고
    • Continuous 300°K laser operation of singlequantum-well AlxGa1_xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
    • Feb. 15
    • R. D. Dupuis, P. D. Dapkus, R. Chin, N. Holonyak, Jr., and S. W. Kirchoefer, “Continuous 300°K laser operation of singlequantum-well AlxGa1_xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 34, pp. 265-267, Feb. 15, 1979.
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 265-267
    • Dupuis, R.D.1    Dapkus, P.D.2    Chin, R.3    Holonyak, N.4    Kirchoefer, S.W.5
  • 49
    • 0018454583 scopus 로고
    • Bevel cross-sectioning of ultrathin (∼100 A) III-V semiconductor layers
    • Apr.
    • N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Bevel cross-sectioning of ultrathin (∼100 A) III-V semiconductor layers,” Solid State Electron., vol. 22, pp. 431-433, Apr. 1979. ‘
    • (1979) Solid State Electron. , vol.22 , pp. 431-433
    • Holonyak, N.1    Vojak, B.A.2    Kolbas, R.M.3    Dupuis, R.D.4    Dapkus, P.D.5
  • 50
  • 51
    • 0018004626 scopus 로고
    • Quantum-well AlxGa1As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
    • Aug.
    • R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., “Quantum-well AlxGa1As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” IEEE J. Quantum Electron., vol. QE-15, pp. 756-761, Aug. 1979.
    • (1979) IEEE J. Quantum Electron. , vol.QE-15 , pp. 756-761
    • Dupuis, R.D.1    Dapkus, P.D.2    Kolbas, R.M.3    Holonyak, N.4
  • 52
    • 0018515741 scopus 로고
    • Low temperature operation of multiple quantum-well AlxGa1_xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
    • Sept.
    • B. A. Vojak, S. W. Kirchoefer, N. Holonyak, Jr., R. Chin, R. D. Dupuis, and P. D. Dapkus, “Low temperature operation of multiple quantum-well AlxGa1_xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition,” J. Appl. Phys., vol. 50, pp. 5830-5834, Sept. 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 5830-5834
    • Vojak, B.A.1    Kirchoefer, S.W.2    Holonyak, N.3    Chin, R.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 53
    • 0018516096 scopus 로고
    • Tunnel injection and phonon-assisted recombination in multiple quantum-well AIxGa1As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
    • Sept. 1
    • B. A. Vojak, N. Holonyak, Jr., R. Chin, E. A. Rezek, R. D. Dupuis, and P. D. Dapkus, “Tunnel injection and phonon-assisted recombination in multiple quantum-well AIxGa1As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition,” J. Appl. Phys., vol. 50, pp. 5835-5840, Sept. 1, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 5835-5840
    • Vojak, B.A.1    Holonyak, N.2    Chin, R.3    Rezek, E.A.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 54
    • 11344268067 scopus 로고
    • Continuous room-temperature multiple-quantum-well AlxGa1_xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition
    • Oct. 1
    • R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., and R. M. Kolbas, “Continuous room-temperature multiple-quantum-well AlxGa1_xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 35, pp. 487-489, Oct. 1, 1979.
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 487-489
    • Dupuis, R.D.1    Dapkus, P.D.2    Holonyak, N.3    Kolbas, R.M.4
  • 55
    • 36749105334 scopus 로고
    • Abrupt Ga1_xAIxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition
    • Mar. 1
    • R. D. Dupuis, P. D. Dapkus, C. M. Garner, C. Y. Su, and W. E. Spicer, “Abrupt Ga1_xAIxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 34, pp. 335-337, Mar. 1, 1979.
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 335-337
    • Dupuis, R.D.1    Dapkus, P.D.2    Garner, C.M.3    Su, C.Y.4    Spicer, W.E.5
  • 56
    • 0015669883 scopus 로고
    • Optical waveguides in GaAs-AlGaAs epitaxial layers
    • Sept.
    • R. A. Logan and F. K. Reinhart, “Optical waveguides in GaAs-AlGaAs epitaxial layers,” J. Appl Phys., vol. 44, pp. 4172-4176, Sept. 1973.
    • (1973) J. Appl Phys. , vol.44 , pp. 4172-4176
    • Logan, R.A.1    Reinhart, F.K.2
  • 57
    • 0015205978 scopus 로고
    • Window heat sink sandwich for optical experiments: Diamond (or sapphire)-semiconductor-indium sandwich
    • Dec.
    • N. Holonyak, Jr., and D. R. Scifres, “Window heat sink sandwich for optical experiments: Diamond (or sapphire)-semiconductor-indium sandwich,” Rev. Sci. Instr., vol. 42, pp. 1885-1886, Dec. 1971.
    • (1971) Rev. Sci. Instr. , vol.42 , pp. 1885-1886
    • Holonyak, N.1    Scifres, D.R.2
  • 58
    • 0003508607 scopus 로고
    • Chicago, IL: Univ. Chicago Press
    • E. Fermi, Nuclear Physics. Chicago, IL: Univ. Chicago Press, 1950, pp. 187-191.
    • (1950) Nuclear Physics , pp. 187-191
    • Fermi, E.1
  • 59
    • 36149021685 scopus 로고
    • Mechanism of excition-enhanced photoelectric emission in alkali halides
    • Mar. 1
    • M. H. Hebb, “Mechanism of excition-enhanced photoelectric emission in alkali halides,” Phys. Rev., vol. 81, pp. 702-705, Mar. 1, 1951.
    • (1951) Phys. Rev. , vol.81 , pp. 702-705
    • Hebb, M.H.1
  • 60
    • 0015753929 scopus 로고
    • Calculated energy distribution of electrons emitted from negative electron affinity GaAs:Cs-0 surfaces
    • Dec.
    • J. S. Escher and H. Schade, “Calculated energy distribution of electrons emitted from negative electron affinity GaAs:Cs-0 surfaces,” J. Appl. Phys., vol. 44, pp. 5309-5313, Dec. 1973.
    • (1973) J. Appl. Phys. , vol.44 , pp. 5309-5313
    • Escher, J.S.1    Schade, H.2
  • 61
    • 0014538291 scopus 로고
    • Transport properties of GaAs obtained from photoemission measurements
    • July 15
    • L. W. James and J. L. Moll, “Transport properties of GaAs obtained from photoemission measurements,” Phys. Rev., vol. 183, pp. 740-753, July 15, 1969.
    • (1969) Phys. Rev. , vol.183 , pp. 740-753
    • James, L.W.1    Moll, J.L.2
  • 62
    • 36749116988 scopus 로고
    • 700-hours continuous room-temperature operation of AlxGa1_xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
    • Aug. 15
    • R. D. Dupuis, “700-hours continuous room-temperature operation of AlxGa1_xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 35, pp. 311-314, Aug. 15, 1979.
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 311-314
    • Dupuis, R.D.1
  • 63
    • 0012266823 scopus 로고
    • Temperature dependence of threshold current for quantum-well AlxGa1_vAs-GaAs heterostructure laser diodes
    • Jan. 1
    • R. Chin, N. Holonyak, Jr., B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, “Temperature dependence of threshold current for quantum-well AlxGa1_vAs-GaAs heterostructure laser diodes,” appl. Phys. Lett., vol. 36, pp. 19-21, Jan. 1, 1980.
    • (1980) appl. Phys. Lett. , vol.36 , pp. 19-21
    • Chin, R.1    Holonyak, N.2    Vojak, B.A.3    Hess, K.4    Dupuis, R.D.5    Dapkus, P.D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.