Neutron irradiation for prevention of latch-up in MDS integrated circuits

IEEE Transactions on Nuclear Science

Volumn 26, Issue 6, 1979, Pages 5069-5073

  Adams, J R ^a   Sokel, R J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

EID: 0018552953     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1979.4330275     Document Type: Article

References (10)

1. B. L. Gregory and B. D. Shafer, “Latch-Up in CMOS Integrated Circuits,” IEEE Trans. on Nuc. Sci. NS20, 293 (1973).
2. L. L. Sivo, J. Rosen, L. C. Jeffers,” Latch-up Screening of LSI Devices,” IEEE Trans. on Nuc. Sci. NS25, 1534 (1978).
3. W. R. Dawes and G. F. Derbenwick, “Prevention of CMOS Latch-up by Gold Doping,” IEEE Trans. on Nuc. Sci., NS23, 2027 (1976).
4. A. Ochoa, W. Dawes, and D. Estreich, “Latch-up Control in CMOS Integrated Circuits,” This Conference.
5. T. R. Waite, “Theoretical Treatment of the Kinetics of Diffusion Limited Reactions,” Phys. Rev. 107, 463 (1957).
6. T. R. Waite, “Diffusion Limited Annealing of Radiation Damage in Germanium,” Phys. Rev. 107, 471 (1957).
7. A. S. Grove, “Physics and Technology of Semiconductor Devices,” (Wiley, New York, 1967) p. 220.
8. B. L. Gregory and C. W. Gwyn, “Radiation Damage in Semiconductor Devices,” SC-M-710887, Vol. 1, Sandia Laboratories, Albuquerque, New Mexico, March 1972.
9. L. M. Choate and T. R. Schmidt, “New Neutron Simulation Capabilities Provided by the Sandia Pulse Reactor-III (SPR-III) and the Upgraded Annular Core Pulse Reactor (ACPR),“ IEEE Trans. on Nuc. Sci. NS25, 1625 (1978).
10. P. E. Gammil and W. H. Burnett, Sandia Laboratories, Albuquerque, New Mexico, (to be published).