An Electrical Mechanism for Holding Time Degradation in Dynamic MOS RAM's

IEEE Transactions on Electron Devices

Volumn 26, Issue 11, 1979, Pages 1684-1690

  Furuyama, Tohru ^a   Ohuchi, Kazunori ^a   Kohyama, Susumu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR;

SEMICONDUCTOR DEVICES, MIS;

EID: 0018546023     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19672     Document Type: Article

References (7)

1. T. C. Lo and M. R. Guidry “An integrated test concept for switched-capacitor dynamic MOS RAM's,” IEEE J. Solid-State Circuits, vol. SC-12, pp. 693–703, Dec. 1977.
2. G. F. Amelio, W. J. Bertram, Jr., and M. F. Tompsett “Charge-coupled coupled imaging devices: Design considerations,” IEEE Trans. Electron Devices, vol. ED-18, pp. 986–992, Nov. 1971.
3. See for example, A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967, pp. 298–305.
4. W. W. Latin and J. L. Rutledge, “Impact ionization current in MOS devices,” Solid-State Electron., vol. 16, pp. 1043–1046, 1973.
5. O. Kudoh, M. Tsurumi, H. Yamanaka, and T. Wada “Influence of substrate current on hold-time characteristics of dynamic MOS IC's,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 235–239, Apr. 1978.
6. J. Matsunaga and S. Kohyama “Evidence for impact ionized electron injection in substrate of N-chan MOS structures,” Appl. Phys. Lett., vol. 33, pp. 335–337, Aug. 1978.
7. K. Tanikawa, Y. Ito, and H. Sei “Evaluation of dark-current non-uniformity uniformity in a charge-coupled device,” Appl. Phys. Lett., vol. 28, pp. 285–287, Mar. 1976.