SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 11, 1979, Pages 6927-6933

X-ray total-external-reflection-Bragg diffraction: A structural study of the GaAs-Al interface

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM AND ALLOYS; SEMICONDUCTING GALLIUM COMPOUNDS; X-RAYS - DIFFRACTION;

SEMICONDUCTOR DEVICES;

EID: 0018541456 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.325845 Document Type: Article

Times cited : (452)

References (7)

2
- 0003732829
- (Cornell U.P., Ithaca, N.Y., )
- (1965) The Optical Principles of the Diffraction of x rays , pp. 171
- James, R.W.¹

3
- 49549139409
- edited by G. Somerjai and J. McCaldin (Pergamon, New York,)
- (1975) Progress in Solid‐State Chemistry , vol.10 , pp. 157
- Cho, A.Y.¹ Arthur, J.R.²

4
- 0017981368
- (1978) J. Appl. Phys , vol.49 , pp. 3328
- Cho, A.Y.¹ Dernier, P.D.²

6
- 84950898958
- We shall adopt the notation that the FWHM denoted by [formula omitted] is along the momentum transfer direction [00l]. Those denoted by [formula omitted] are along the direction [hk 0].

7
- 84918091339
- Physics of Semiconductors (1978)
- edited by B. L. H. Wilson (Institute of Physics, Bristol, London,)
- (1978) Inst. Phys. Conf. Ser. No. 43 , pp. 1073
- Bachrach, R.Z.¹ Bauer, R.S.² McMenamin, J.C.³ Bianconi, A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.