Gaas fet applications for injection-locked oscillators and self-oscillating mixers

IEEE Transactions on Microwave Theory and Techniques

Volumn 27, Issue 7, 1979, Pages 629-632

  Tajima, Yusuke ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, MIXER; MATHEMATICAL MODELS; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

INJECTION LOCKED OSCILLATORS;

OSCILLATORS, MICROWAVE;

EID: 0018492446     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1979.1129691     Document Type: Article

References (4)

1. K. Kurokawa, “Injection locking of microwave solid-state oscillators,” Proc. IEEE, vol. 61, pp. 1386-1410, Oct. 1973.
2. R. Pucel, D. Masse, and R. Bera, “Performance of GaAs MESFET mixers at X band,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 351-360, June 1976.
3. J. R. East, Hien Nhuyen-Ba, and G. I. Haddad, “Design, fabrication and evaluation of Baritt devices for Doppler applications,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 943-948, Dec. 1976.
4. H. Abe, Y. Takayama, A. Higashisaka, and H. Takamizawa, “A high stabilized low-noise GaAs FET integrated oscillator with a dielectric resonator in the C band,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, pp. 156-162, Mar. 1978.