A High-Speed Low-Power Hi-CMOS 4K Static RAM

IEEE Transactions on Electron Devices

Volumn 26, Issue 6, 1979, Pages 882-885

  Minato, Osamu ^a   Masuhara, Toshiaki ^a   Sasaki, Toshio ^a   Sakai, Yoshio ^a   Kubo, Masaharu ^a   Uchibori, Kiyohumi ^a   Yasui, Tokumasa ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR; TRANSISTOR, BIPOLAR;

RAM;

DATA STORAGE, SEMICONDUCTOR;

EID: 0018480071     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19513     Document Type: Article

References (9)

1. R. Pashley, W. Owen, K. Kokkonen, R. Jecmen, A. Ebel, C. Ahlquist, and P. Schoen, “A high performance 4K static RAM fabricated with an advanced MOS technology, ISSCC Dig. Tech. Papers, pp. 22–23, Feb. 1977.
2. R. Pashley, K. Kokonnen, E. Boleky, R. Jecmen, S. Liu, and W. Owen, “H-MOS scales traditional devices to higher performance level,” Electron., 94–99, 18, 1977.
3. K. Kobayashi, M. Saitoh, Y. Murao, and K. Takahashi, “High speed 1K bit static RAM using DSA MOST’s, Dig. Tech. Papers, 10th Conf. on Solid State Devices (Tokyo, Japan), pp. 21–22, Aug. 1978.
4. K. Ochii, Y. Suzuki, M. Ueno, K. Sato, and K. Asahi, “C 2 MOS 4K static RAM, ISSCC Dig. Tech. Papers, pp. 18–19, Feb. 1977.
5. A. Dingwall, R. Stricker, and J. Sinniger, “A high speed bulk CMOS C 2 L microprocessor,” IEEE J. Solid-State Circuits, vol. SC-12, no. 5, pp. 457–462, Oct. 1977.
6. T. Mashuhara, O. Minato, T. Sasaki, M. Kubo, and T. Yasui, “A high-speed, low-power Hi-CMOS 4K static RAM, ISSCC Dig. Tech. Papers, 110–111, Feb. 1978.
7. Y. Sakai, T. Masuhara, O. Minato, and N. Hashimoto, “High packing density, high speed CMOS (Hi-CMOS) device technology, Dig. Tech. Papers, 10th Conf. on Solid State Devices (Tokyo, Japan), pp. 19–20, Aug. 1978.
8. G. Wilson, “A monolithic junction FET NPN operational amplifier, ISSCC Dig. Tech. Papers, pp. 20–21, Feb. 1968.
9. H. Lin, J. Ho, R. Iyer, and K. Kwong, “Complementary MOS- bipolar transistor structure,” IEEE Trans. Electron Devices, vol. ED-16, pp. 945–951, Nov. 1969.