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Volumn 50, Issue 5, 1979, Pages 3414-3422

The dc voltage dependence of semiconductor grain-boundary resistance

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; VARISTORS;

EID: 0018469297     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.326334     Document Type: Article
Times cited : (409)

References (18)
  • 6
    • 84951027793 scopus 로고    scopus 로고
    • Equation (9) has also been obtained by treating the boundary problem according to electron diffusion theory (Ref. 2).
  • 15
    • 84950976497 scopus 로고    scopus 로고
    • Emtage (Ref. 5) reached the same conclusion based on his [formula omitted] (E) deconvolution scheme.
  • 18
    • 84951013205 scopus 로고    scopus 로고
    • For the two temperature curves to have roughly the same shape, [formula omitted] and [formula omitted] must not be too far apart. This is especially true when [formula omitted] (E) varies rapidly with energy so [formula omitted] in Eq. (17) significantly broadens [formula omitted] The above condition on [formula omitted] and [formula omitted] also ensures that the finite‐difference approximations in Eqs. (20) and (21) are accurate. Regarding the shape of the curves at [formula omitted] and [formula omitted] the reason they will be similar, even if the estimated [formula omitted] is incorrect, is that the ([formula omitted]) term in Eq. (17) dominates over a large range; Eq. (19) shows that this term is independent of the estimated [formula omitted]


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.