Millimeter-Wave Pulsed IMPATT Sources

IEEE Transactions on Microwave Theory and Techniques

Volumn 27, Issue 5, 1979, Pages 492-499

  Kuno, H J ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, IMPATT;

PULSED OSCILLATORS;

OSCILLATORS;

EID: 0018467943     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1979.1129654     Document Type: Article

References (10)

1. R. S. Ying et al., “Millimeter-wave pulsed IMPATT oscillators,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 279–285, Apr. 1976.
2. C. Chao et al., “Pulsed IMPATT diode oscillators above 200 GHz,” presented at the 1977 IEEE Int. Solid-State Circuits Conf., Philadelphia, PA, Feb. 1977.
3. T. T. Fong, W. R. Lane, H. J. Kuno, and N. B. Kramer, “High power W-band pulsed IMPATT oscillators,” in 1977 IEEE Int. Microwave Symp. Dig., San Diego, CA, pp. 20–21, 1977.
4. M. Simonutti D. L. English, and E. M. Nakaji, “High power Ka-band pulsed oscillators,” to be published.
5. K. Chang, C. Sun, D. L. English, and E. M. Nakaji, “High power W-band pulsed IMPATT oscillators,” to be published.
6. M. Ngan and E. M. Nakaji, “140 GHz pulsed IMPATT oscillators,” to be published.
7. T. Misawa, “Negative resistance in p—n junction under avalanche breakdown conditions, Parts I and II,” IEEE Trans. Electron Devices, vol. ED-13, 137–151, Jan. 1966.
8. T. T. Fong, K. P. Weller, and D, L. English, “Circuit characterization of V-band IMPATT oscillators and amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT 24, pp. 752–758, Nov. 1976.
9. J. C. Jaeger, “Pulsed surface heating of semi-infinite solids,” Australian J. Quarterly Mathematics, vol. XI, pp. 123–137, 1953.
10. G. Gibbons, “Transient temperature response of an avalanche diode,” Solid State Electron., vol. 13, pp. 799–806, Aug. 1969.