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Volumn 50, Issue 4, 1979, Pages 2799-2812

Theory of conduction in ZnO varistors

Author keywords

[No Author keywords available]

Indexed keywords

VARISTORS;

EID: 0018458635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.326191     Document Type: Article
Times cited : (415)

References (40)
  • 34
    • 84951198893 scopus 로고    scopus 로고
    • It should be emphasized that evaluations of the breakdown voltage per grain barrier are best taken from single‐grain measurements (Ref. 18). Values deduced from measurements of average grain size and macroscopic breakdown field are generally too low. This arises since breakdown in this highly nonlinear device occurs along the path having the fewest grains.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.