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Volumn 50, Issue 3, 1979, Pages 1519-1528

Energy and fluence dependence of the sputtering yield of silicon bombarded with argon and xenon

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0018443252     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.326140     Document Type: Article
Times cited : (87)

References (42)
  • 15
    • 84951200154 scopus 로고    scopus 로고
    • rf‐sputter deposition of silicon was performed at Hughes Research Laboratories, Malibu, Calif.
  • 16
    • 84951098914 scopus 로고    scopus 로고
    • The vapor‐deposited silicon films were prepared at the Research Institute of AEG‐Telefunken, Ulm, Federal Republic of Germany.
  • 35
    • 84951018035 scopus 로고    scopus 로고
    • The specimen used in the experiments of Ref. 4 was kindly placed at our disposal by H. L. Bay.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.