Strain-induced optical waveguiding in GaAs epitaxial layers at 1 15 µm

Electronics Letters

Volumn 15, Issue 3, 1979, Pages 99-100

  Westbrook, L D ^a   Robson, P N ^a   Majerfeld, A ^a,b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

Epitaxial layers; Gallium arsenide; III V semiconductors; Optical waveguides

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM ARSENIDE;

WAVEGUIDES, OPTICAL;

EID: 0018434693     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19790072     Document Type: Article

References (4)

1. Campbell, J. C., Blum, F. A., and Shaw, D. W.: ‘GaAs electro-optic channel-waveguide modulator’, Appl. Phys. Lett., 1975, 26, pp. 640–642
2. xAs lasers’ (to be published)
3. Campbell, D. S.: ‘Mechanical properties of thin films’ in Maissel, L., and Glang, R. (Eds.): ‘Handbook of thin film technology’ (McGraw-Hill, New York, 1970)
4. Garmire, E.: ‘Semiconductor components for monolithic applications’ in Tamir, T. (Ed.): ‘Integrated optics’ (Springer-Verlag, 1975, pp. 243–302)