Boron and Boron‐based semiconductors

physica status solidi (a)

Volumn 51, Issue 1, 1979, Pages 11-40

  Golikova, O A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING BORON;

EID: 0018323077     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210510102     Document Type: Review

References (221)

1. The Structure of β-Rhombohedral Boron
2. Boron Crystals
3. On the Conductivity Mechanism of β-Rhombohedral Boron
4. Magnetoresistance of Boron on Illumination
5. On the Influence of a Magnetic Field on the Conductivity Due to Electron Tunneling between Localized States
6. Thermoelectric power in crystalline boron
7. Optische und photoelektrische Eigenschaften von β-rhomboedrischem Bor. I. Optische Konstanten, Bandkante und Absorption freier Landungsträger
8. Optical and Photoelectrical Properties of β-Rhombohedral Boron II. Photoeffects
9. Orientation-dependent effects of EPR-measurements on β-rhombohedral boron
10. Paramagnetic centres in amorphous boron
11. Kinetics of Photoconductivity in Boron
12. Influence of magnetic field on conductivity due to electron tunneling between localized states
13. Space-charge-limited currents in β -rhombohedral boron
14. Thermally Stimulated Current in Boron
15. Optical Anisotropy of β-Rhombohedral Boron from 0.4 to 16 μm
16. Anisotropy in the Reflection Coefficient of β-Rhombohedral Boron in the Region 1 to 6 eV
17. Optical Constants of β-Rhombohedral Boron in the Region 1.2 to 6.2 eV
18. Some Optical Properties of Boron
19. Dichroism of β-rhombohedral boron in the absorption edge region
20. Photoemission from beta-rhombohedral boron
21. The crystal structure of a simple rhombohedral form of boron
22. Packing of B12groups in boron and boride structures
23. Crystal Chemical Relations Between the Nonmetal Borides B[sub 48]B[sub 2]C[sub 2] and B[sub 48]B[sub 2]N[sub 2] and the Hypothetical “l-Tetragonal Boron”
24. Preparation and Properties of the Boron Phosphides
25. Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH3-B2H6-H2System
26. Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system
27. Binäre verbindungen des bors mit elementen der v. hauptgruppe unter erhaltung von ikosaedrischen grundgerüsten: Tetragonales bornitrid und rhomboedrisches borphosphid
28. Unit cell, space group and composition of a lower boron phosphide
29. Extension of the boron-carbon homogeneity range
30. Optical properties of boron carbide and comparison with β-rhombohedral boron
31. Zur Darstellung und Struktur von tetragonalem und rhombischem (Al, Be)B12 vom Typ des ?-AlB12
32. Phase Behavior in the Sm-B System
33. Preparation of BP Single Crystals from B-Ni-P Solution
34. Boron Monophosphide and Some of Its Electrical Properties
35. Thermal Expansion Coefficient of Boron Monophosphide
36. New group III-group V compounds: BP and BAs
37. Preparation and Properties of Boron Arsenides and Boron Arsenide-Gallium Arsenide Mixed Crystals
38. Crystal Potential and Energy Bands of Semiconductors. II. Self-Consistent Calculations for Cubic Boron Nitride
39. Selective Removal of BP from Si Substrate