DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN ″COMPOUNDS″ .

Volumn , Issue , 1978, Pages 328-332

  Svensson, Christer M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - DEFECTS;

SOLID STATE DEVICES;

EID: 0018154439     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1016/b978-0-08-023049-8.50061-0     Document Type: Conference Paper

References (17)

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2. 2 IEEE Trans. Nucl. Sci. NS-18 No 6 1971 113
3. 2 IEEE Trans. Nucl. Sci. NS-18 No 6 1971 99
4. E. Kooi The surface charge in oxidized silicon Philips Res. Rep. 21 1966 477
5. F. Montillo P. Balk High-temperature annealing of oxidized silicon surfaces J. Electrochem. Soc. 118 1971 1463
6. 2 J. Phys. Chem. Solids 32 1971 1251
7. 2 films by injected electron currents J. Appl. Phys. 42 1971 5643
8. A.G. Revesz Noncrystalline silicon dioxide films on silicon: a Review J. Noncryst. Solids 11 1973 309
9. A.G. Revesz R.J. Evans Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects J. Phys. Chem. Solids 30 1969 551
10. In most cases dry oxidation involve water vapor, see refs. 5 and 8.
11. K.H. Beckman N.J. Harrick Hydrides and hydroxyls in thin silicon dioxide films J. Electrochem. Soc. 118 1971 614
12. R.J. Powell C.N. Berglund Photoinjection studies of charge distribution in oxides of MOS structures J. Appl. Phys. 42 1971 4390
13. K.O. Jeppson C.M. Svensson Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices J. Appl. Phys. 48 1977 2004
14. E.H. Snow A.S. Grove D.J. Fitzgerald Effects of ionizing radiation on oxidized surfaces and planar devices Proc. IEEE 55 1967 1168
15. M.H. Woods R. Williams Hole traps in silicon dioxide J. Appl. Phys. 47 1976 1082
16. G.W. Hughes R.J. Powell M.H. Woods Oxide thickness dependence of high-energy-electron, VUV-, and corona-induced charge in MOS capacitors Appl. Phys. Lett. 29 1976 377
17. P.S. Winokur M.M. Sokoloski Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation Appl. Phys. Lett. 28 1976 627