ESR CENTERS AND CHARGE DEFECTS NEAR THE Si/SiO2 INTERFACE.

Volumn , Issue , 1978, Pages 227-231

  Poindexter, Edward H ^a   Ahlstrom, Edwin R ^a   Caplan, Philip J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - RESONANCE; SOLID STATE DEVICES - METAL/INSULATOR BOUNDARIES;

SEMICONDUCTOR MATERIALS;

EID: 0018107598     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1016/b978-0-08-023049-8.50044-0     Document Type: Conference Paper

References (10)

1. B.E. Deal The current understanding of charges in the thermally oxidized silicon structure J. Electrochem. Soc. 121 1974 198C
2. Y. Nishi Study of silicon-silicon dioxide structure by electron spin resonance I Japan J. Appl. Phys. 10 1971 51
3. P.J. Caplan J.N. Helbert B.E. Wagner E.H. Poindexter Paramagnetic defects in silicon/silicon dioxide systems Surface Science 54 1976 33
4. Y.-H. Lee J.W. Corbett EPR studies in neutron-irradiated silicon: a negative charge state of a nonplanar five-vacancy cluster (V) Phys. Rev. B8 1973 2810
5. G.D. Watkins J.W. Corbett Defects in irradiated silicon: electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center Phys. Rev. 134 1964 A1359
6. G.D. Watkins J.W. Corbett Defects in irradiated silicon: electron paramagnetic resonance of the divacancy Phys. Rev. 138 1965 A543
7. 2 Solid State Commun. 15 1974 479
8. 2 Solid State Commun. 14 1974 225
9. 2 interface IEEE Trans. ED-24 1977 1217
10. 2 Appl. Phys. Letters 30 1977 290