A Technique for Predicting Large-Signal Performance of a GaAs MESFET

IEEE Transactions on Microwave Theory and Techniques

Volumn 26, Issue 12, 1978, Pages 1017-1023

  Willing, Harry A ^a   Rauscher, Christen ^a   De SANTIS, Pietro ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECLTRIC NETWORKS, ACTIVE - EQUIVALENT CIRCUITS; SEMICODUCTOR DEVICES, MIS;

TRANSISTORS, FIELD EFFECT;

EID: 0018047210     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1978.1129538     Document Type: Article

References (4)

1. H. A. Willing and P. de Santis, “Modeling of Gunn domain effects in GaAs MESFET’s,” Inst. Elec. Eng. Electron. Lett., vol. 13, no. 18, pp. 537–539, 1977.
2. K. Lehovec and R. Zuleeg, “Voltage - current characteristics of GaAs J-FET's in the hot electron range,” Inst.Elec. Eng. Solid-State Electron., vol. 13, pp. 1415–1429, 1970.
3. R. W. H. Engelmann and C. A. Liechti, “Gunn domain formation in the saturated region of the GaAs MESFET’s,” in IEEE Int. Electron Devices Conf. Digest, 1976, pp. 351–354.
4. R. S. Tucker and C. Rauscher, “Modeling the 3rd-order intermodulation-distortion properties of a GaAs PET,” Electron. Lett., vol, 13, no. 17, pp. 508–510, 1977.