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Volumn 13, Issue 6, 1978, Pages 799-805

Design of Integrated Analog CMOS Circuits—A Multichannel Telemetry Transmitter

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, DIFFERENTIAL; TELEMETERING EQUIPMENT;

EID: 0018046826     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1978.1052053     Document Type: Article
Times cited : (24)

References (9)
  • 1
    • 84945722420 scopus 로고
    • Entwurf von Analogschaltungen in integrierter Komplementär-MOS-Technik–Ein integrierter Mehrkanal-Telemetriesender
    • Ph.D. dissertation, RWTH Aachen, Jan.
    • W. Steinhagen, “Entwurf von Analogschaltungen in integrierter Komplementär-MOS-Technik–Ein integrierter Mehrkanal-Telemetriesender,” Ph.D. dissertation, RWTH Aachen, Jan. 1977.
    • (1977)
    • Steinhagen, W.1
  • 2
    • 0000175457 scopus 로고
    • The silicon insulated-gate field-effect transistor
    • Sept.
    • S. R. Hofstein and F. P. Heiman, “The silicon insulated-gate field-effect transistor,” Proc. IEEE, vol. 51, pp. 1190–1202, Sept. 1963.
    • (1963) Proc. IEEE , vol.51 , pp. 1190-1202
    • Hofstein, S.R.1    Heiman, F.P.2
  • 3
    • 0042082412 scopus 로고
    • Source-to-drain resistance beyond pinch-off in MOS-transistors
    • Mar.
    • V. G. K. Reddi and C. T. Sah, “Source-to-drain resistance beyond pinch-off in MOS-transistors,” IEEE Trans. Electron Devices, vol. ED-12, pp. 139–141, Mar. 1965.
    • (1965) IEEE Trans. Electron Devices , vol.ED-12 , pp. 139-141
    • Reddi, V.G.K.1    Sah, C.T.2
  • 5
    • 0016569911 scopus 로고
    • Subthreshold slope for insulated gate field-effect transistors
    • Nov.
    • R. R. Troutman, “Subthreshold slope for insulated gate field-effect transistors,” IEEE Trans. Electron. Devices, vol. ED-22, pp. 1049–1051, Nov. 1975.
    • (1975) IEEE Trans. Electron. Devices , vol.ED-22 , pp. 1049-1051
    • Troutman, R.R.1
  • 6
    • 0015300231 scopus 로고
    • Subthreshold drain leakage currents in MOS field-effect transistors
    • Feb.
    • W. M. Gosney, “Subthreshold drain leakage currents in MOS field-effect transistors,” IEEE Trans. Electron. Devices, vol. ED-19, pp. 213–219, Feb. 1972.
    • (1972) IEEE Trans. Electron. Devices , vol.ED-19 , pp. 213-219
    • Gosney, W.M.1
  • 7
    • 0016518930 scopus 로고
    • Observation of the Boltzmann limit for an IGFET
    • June
    • M. J. Lazarus, “Observation of the Boltzmann limit for an IGFET,” IEEE Trans. Electron Devices, vol. ED-22, p. 365, June 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , pp. 365
    • Lazarus, M.J.1
  • 8
    • 0015600404 scopus 로고
    • The insulated gate field-effect transistors-A bipolar transistor in disguise
    • Mar.
    • E. O. Johnson, “The insulated gate field-effect transistors-A bipolar transistor in disguise,” RCA Rev., vol. 34, pp. 80–94, Mar. 1973.
    • (1973) RCA Rev. , vol.34 , pp. 80-94
    • Johnson, E.O.1
  • 9
    • 0017503796 scopus 로고
    • CMOS analog integrated circuits based on weak inversion operation
    • June
    • E. Vittoz and J. Fellrath, “CMOS analog integrated circuits based on weak inversion operation,” IEEE J. Solid-State Ciircuits, vol. SC-12, pp. 224-231, June 1977.
    • (1977) IEEE J. Solid-State Ciircuits , vol.SC-12 , pp. 224-231
    • Vittoz, E.1    Fellrath, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.