Approximation of Junction Field-Effect Transistor Characteristics by a Hyperbolic Function

IEEE Journal of Solid-State Circuits

Volumn 13, Issue 5, 1978, Pages 724-726

  Taki, Takashi ^a  

^a TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0018027707     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1978.1051128     Document Type: Article

References (6)

1. W. Shockley, “A unipolar ‘field-effect’ transistor,” Proc. IRE, vol. 40, pp. 1365–1376, Nov. 1952.
2. L. J. Sevin, Jr., Field-Effect Transistors. New York: McGraw-Hill, 1965.
3. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969.
4. R. D. Middlebrook, “A simple derivation of field-effect transistor characteristics,” Proc. IEE (Corresp.), vol. 51, pp. 1146–1147, Aug. 1963.
5. I. Richer and R. D. Middlebrook, “Power-law nature of field-effect transistor experimental characteristics,” Proc. IEEE (Corresp.), vol. 51, pp. 1145–1146, Aug. 1963.
6. B. D. Wedlock, “Direct determination of the pinch-off voltage of a depletion-mode field-effect transistor,” Proc. IEEE (Lett.), vol. 57, pp. 75–77, Jan. 1969.