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Volumn 26, Issue 9, 1978, Pages 639-642

Computer-Aided Determination of Microwave Two-Port Noise Parameters

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTERS - APPLICATIONS; MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES - LEAST SQUARES APPROXIMATIONS; TRANSISTORS - MICROWAVES;

EID: 0018018880     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1978.1129454     Document Type: Article
Times cited : (67)

References (5)
  • 1
    • 84937078255 scopus 로고
    • IRE Standards on methods of measuring noise in linear two-port, 1959
    • Jan.
    • “IRE Standards on methods of measuring noise in linear two-port, 1959,” Proc. IRE, vol. 48, pp. 60–68, Jan. 1960.
    • (1960) Proc. IRE , vol.48 , pp. 60-68
  • 2
    • 0014926816 scopus 로고
    • Computer-aided determination of two-port noise parameters (CADON)
    • Nov.
    • W. Kokyczka, A. Leupp, and M. J. O. Strutt “Computer-aided determination of two-port noise parameters (CADON),” Proc. IEEE, vol. 58, pp. 1850–1851, Nov. 1970.
    • (1970) Proc. IEEE , vol.58 , pp. 1850-1851
    • Kokyczka, W.1    Leupp, A.2    Strutt, M.J.O.3
  • 3
    • 0014638211 scopus 로고
    • The determination of device noise parameters
    • Aug.
    • R. Q. Lane “The determination of device noise parameters,” Proc. IEEE, vol. 57, pp. 1461–1462, Aug. 1969.
    • (1969) Proc. IEEE , vol.57 , pp. 1461-1462
    • Lane, R.Q.1
  • 4
    • 2542423501 scopus 로고
    • Noise characterization of linear two-ports in terms of invariant parameters
    • June
    • J. Lange “Noise characterization of linear two-ports in terms of invariant parameters,” IEEE J. Solid-State Circuits, vol. SC-2, pp. 37–40, June 1967.
    • (1967) IEEE J. Solid-State Circuits , vol.SC-2 , pp. 37-40
    • Lange, J.1
  • 5
    • 84930556056 scopus 로고
    • The noise performance of microwave transistor
    • Mar.
    • H. Fukui “The noise performance of microwave transistor,” IEEE Trans. Electron Devices, vol. ED-13, pp. 329–341, Mar. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 329-341
    • Fukui, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.