A Numerical Model of Avalanche Breakdown in MOSFET's TORU TOY ABE

IEEE Transactions on Electron Devices

Volumn 25, Issue 7, 1978, Pages 825-832

  Yamaguchi, Ken ^a   Asai, Shojiro ^a   Mock, Michaels ^b  

^a HITACHI LTD   (Japan)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017996560     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19179     Document Type: Article

References (10)

1. A. S. Grove, Physics and Technology of Semiconductor Devices. New York, NY: Wiley, 1967, pp. 311-315.
2. H. E. Longo, “Ladungstragermultiplikation bei MIS-Transistoien,” Z. Angew. Phys., vol. 29, p. 166, 1970.
3. D. P. Kennedy and A. Phillips, Jr., “Source-drain breakdown in an insulated gate field-effect transistor,” in Int. Electron Devices Meet., Tech. Dig., pp. 160-163, paper 8.5, Dec. 1973.
4. R. R. Troutman, “Low-level avalanche multiplication in IGFET's,” IEEE Trans. Electron Devices, vol. ED-23, pp. 419-425, Apr. 1976.
5. S. M. Sze, Physics of Semiconductor Devices. New York, NY: Wiley, 1969, pp. 111-126.
6. H. L. Stone, “Iterative solution of implicit approximations of multidimensional partial differential equations,” SIAM J. Numer. Anal., vol. 5, pp. 530-558, Sept. 1968.
7. M. S. Mock, “A TwoDimensional mathematical model of the insulated-gate field-effect transistor,” Solid-State Electron., vol. 16, pp. 601-609,1973.
8. W. C. Niehaus, T. E. Seidel, and D. E. Iglesias, “Double-drift IMPATT diodes near 100 GHz,” IEEE Trans. Electron Devices, vol. ED-20, pp. 765-771, June 1973.
9. H. K. Ihantola and J. L. Moll, “Design theory of a surface field-effect transistor,” Solid-State Electron., vol. 7, pp. 423-430, 1964.
10. R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. LeBlanc, “Design of Ionimplanted MOSFET's with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 256-268, Oct. 1974.