SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 7, 1978, Pages 3879-3889

Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0017996340 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.325394 Document Type: Article

Times cited : (241)

References (28)

4
- 84951898156
- Proceedings of the National Workshop in Low Cost Polycrystalline Silicon Solar Cells, Dallas, 1977, (unpublished).
- Cleland, J.W.¹ Westbrook, R.D.² Wood, R.F.³ Young, R.T.⁴

10
- 0004005306
- See, for example, (Wiley‐Interscience, New York,)
- (1969) Physics of Semiconductor Devices , pp. 378-393
- Sze, S.M.¹

14
- 0004289868
- See, for example, H. F. Mataré, (Wiley‐Interscience, New York)
- (1971) Defect Electronics in Semiconductors

15
- 84951897484
- This equation will hold if (a) image force corrections are negligible and (b) all the excess charge in the barrier region lies at [formula omitted] Condition (a) will be met if the electrons occupying grain‐boundary defect states are highly localized. By making approximation (b), we are neglecting the voltage variations in the actual grain‐boundary region (of width w). A worst case calculation of this additional contribution to the barrier height shows that it is no larger than ̃10 meV using [formula omitted] and defect state densities [formula omitted] similar to those deduced in Sec. unless the actual region of localized GB states is exceedingly wide, Eq. (5) should be sufficiently accurate.
- Thus, I.I.I.¹

16
- 84951885174
- In writing this expression, we are making the implicit assumption that the important contributions to Q come from a filling of the in‐gap states. The addition of electrons to the conduction band or elimination of holes from the valence band could be accounted for by including in [formula omitted] all electron states and making the upper and lower limits in the integrals of Eq. (6) +∞ and −∞, respectively. Unless [formula omitted] is quite small, however, the present expression should be sufficiently accurate.

19
- 84951902045
- In this series of arguments, we quote the values of [formula omitted] at [formula omitted] At finite temperatures [formula omitted] but this fact does not affect the logic of the deductions based on transport theories of inhomogeneous media.

20
- 35949029025
- (1974) Phys. Rev. B , vol.10 , pp. 1421
- Seager, C.H.¹ Pike, G.E.²

22
- 84951903635
- This value of [formula omitted] is computed assuming that the temperature coefficient of [formula omitted] is identical to that of the grain Fermi level. This is appropriate in the saturation regime—which appears to hold for [formula omitted] in our samples. At doping levels greater than [formula omitted] this estimate should be multiplied by [formula omitted] due to the disappearance of the temperature dependence of [formula omitted]

25
- 84951902872
- Proc. IEEE Photovoltaics Conference, Baton Rouge, 1976 (unpublished).
- Young, R.T.¹ Cleland, J.W.² Wood, R.F.³

26
- 84951891577
- (1973) Phys. Rev. Lett , vol.30 , pp. 695
- Cohen, M.H.¹ Jortner, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.