The effects of core structure on radiative and non-radiative recombinations at metal ion substituents in semiconductors and phosphors

Advances in Physics

Volumn 27, Issue 4, 1978, Pages 499-532

  Robbins, D J ^a   Dean, P J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - STRUCTURE; PHOSPHORS; SEMICONDUCTOR DIODES, LIGHT EMITTING;

TRANSITION METALS;

SEMICONDUCTOR MATERIALS;

EID: 0017985029     PISSN: 00018732     EISSN: 14606976     Source Type: Journal    
DOI: 10.1080/00018737800101434     Document Type: Article

References (66)

1. Bebgh, A. A., and Dean, P. J., 1976, Light Emitting Diodes (Oxford: Clarendon Press).
2. Kohn, W., 1957, Solid St. Phys., 5, 258.
3. Faulkner, R. A., 1969, Phys. Rev., 184, 713.
4. Dean, P. J., White, A. M., Hamilton, B., Peaker, A. R., and Gibb, R. M., 1977, J. Phys. D, 10, 2545.
5. Van Uitert, L. G. (Chapter 9), and Garlick, G. F. J. (Chapter 12), 1966, Luminescence of Inorganic Solids, edited by P. Goldberg (New York: Academic Press).
6. Robbins, D. J., Cockayne, B., Lent, B., Duckworth, C. N., and Mansfield, F., 1976, Proc. 12th Rare Earth Res. Conf. (Denver Research Institute), p. 1004.
7. Robbins, D. J., Cockayne, B., Lent, B., Duckworth, C. N., and Glasper, J. L., 1978, Phys. Rev. B (to be published).
8. Fowler, W. B., 1968, Physics of Colour Centres, edited by W. B. Fowler (New York: Academic Press), Chapter 2.
9. Shionoya, S., 1967, II-VI Semiconducting Compounds, edited by D. G. Thomas (New York: W. A. Benjamin Inc.), p. 1.
10. Gershenzon, M., and Mikulyak, R. M., 1962, Solid-St. Electron., 5, 313.
11. Ryabokon’, V. N., and Svidzinskii, K. K., 1969, Soviet Phys. Solid St., 11, 473; 1972, Soviet Phys. Semicond., 5, 1623.
12. Weakliem, H. A., 1962, J. chem. Phys., 36, 2117; references [4] and [5] of which provide a background to crystal field theory.
13. Dean, P. J., Faulkner, R. A., Kimura, S., and Ilegems, M., 1971, Phys. Rev. B, 4, 1926.
14. Lyon, S. A., Osbourn, G. C., Smith, D. L., and McGill, T. C., 1977, Solid St. Commun., 23, 425.
15. Monemar, B., 1976 (private communication).
16. Kukimoto, H., Henry, C. H., and Merrit, F. R., 1973, Phys. Rev. B, 7, 2487.
17. Beattie, A. R., and Landsberg, P. T., 1969, Proc. R. Soc. A, 249, 16.
18. Moos, H. W., 1970, J. Lumin., 1, 2, 106.
19. Cuthbert, J. D., and Thomas, D. G., 1967, Phys. Rev., 154, 763.
20. Bachrach, R. Z., and Lorimer, O. G., 1973, Phys. Rev. B, 7, 700.
21. Neumark, G. F., 1973, Phys. Rev. B, 7, 3802.
22. Dapkus, P. D., Hackett, W. H., Jr., Lorimer, O. G., Kammlott, G. W., and Haszko, S. E., 1973, Appl. Phys. Lett., 22, 227
23. Young, M. L., and Wight, D. R., 1974, J. Phys. D, 7, 1824.
24. Haynes, J. R., 1960, Phys. Rev. Lett., 4, 361.
25. Dean, P. J., 1973, Luminescence of Crystals, Molecules and Solutions, edited by F. E. Williams (New York: Plenum Press), p. 538.
26. _3 (see [27]).
27. The Auger ratss for free holes should equal those for holes bound at uniformly distributed shallow acceptors: Tsang, J. C., Dean, P. J., and Landsberg, P. T., 1968, Phys. Rev., 173, 814. The enhancement for deeper acceptors results mainly from the greater ease of momentum conservation due directly to the increased localization of the bound holes. We also assume that carrier capture at the deep acceptors is not a rate-limiting step in the recombination process.
28. Milnes, A. G., 1973, Deep Impurities in Semiconductors (New York: Wiley).
29. Nelson, D. F., Cuthbert, J. D., Dean, P. J., and Thomas, D. G., 1966, Phys. Rev. Lett., 17, 1262.
30. Dean, P. J., Schairer, W., Lorenz, M., and Morgan, T. N., 1974, J. Lumin., 9 343.
31. Morgan, T. N., 1968, Phys. Rev. Lett., 21, 819.
32. Dean, P. J., 1970, J. Lumin., 1, 2, 398.
33. Clark, M. G., and Dean, P. J., 1978, Proceedings of the Conference on Physics of Semiconductors, Edinburgh.
34. Shaffer, J., and Williams, F., 1970, Phys. Stat. Sol., 38, 657.
35. Tabei, M., Shionoya, S., and Ohmatsu, H., 1975, Jap. J. appl. Phys., 14, 240.
36. Hopfield, J. J., 1964, Proc. 1th Int. Conf. Phys. Semicond., Paris (Paris: Dunod), p. 725.
37. Thomas, D. G., 1966, Proc. 8th Int. Conf. Phys. Şemicond., Kyoto (supplement to J. phys. Soc. Japan, 21, 265).
38. Czaja, W., 1971, Advances in Solid State Physics XI, edited by O. Madelung (Pergamon Press), p. 65.
39. Merz, J. L., and Lynch, R. T., 1967, II-VI Semiconducting Compounds, edited by D. G. Thomas (New York: W. A. Benjamin Inc.), p. 730.
40. Onodeka, Y., and Toyozawa, Y., 1968, J. phys. Soc. Japan, 24, 341, and references therein.
41. Bass, I. L., and Mieher, R. L., 1968, Phys. Rev., 175, 421.
42. Tanimura, K., and Okada, T., 1976, Phys. Rev. B, 13, 1811.
43. Beaumont, J. H., Hayes, W., Kirk, D. L., and Summers, G. P., 1970, Proc. R. Soc. A, 315, 69.
44. Dingle, R., 1969, Phys. Rev. Lett., 23, 579.
45. Permogorov, S. A., Reznitskii, A. N., and Kazenov, V. A., 1972, Optics Spectrosc., 32, 392.
46. Struck, C. W., and Fonger, W. H., 1971, Phys. Rev. B, 4, 22.
47. Delbecq, C. J., Hayes, W., O’Brien, M. C. M., and Yuster, P. H., 1963, Proc. R. Soc. A, 271, 243.
48. Delbecq, C. J., Ghosh, A. K., and Yuster, P. H., 1966, Phys. Rev., 151, 599.
49. Kratzig, E., Timusk, T., and Martienssen, W., 1965, Phys. Stat. Sol., 10, 709.
50. Kaufman, R. G., Hadley, W. B., and Hersh, H. N., 1970, I.E.E.E. Trans. nucl. Sci., 17, 82.
51. Batygov, S. Kh., Voron’ko, Yu. K., Denker, B. I., Maier, A. A., Osiko, V. V., Radyukhin, V. S., and Timoshechkin, M. I., 1972, Soviet Phys. solid St., 14, 839.
52. Graver, V. E., Zirap, V. E., and Kruminysh, I. Ya., 1974, Izv. Akad. Nauk SSSR Ser. Fiz., 38, 1207.
53. Longuet-Higgins, H. C., 1966, Quantum Theory of Atoms, Molecules and the Solid State, edited by P. O. Lowdin (New York: Academic Press), p. 105.
54. Morgan, T. N., 1977, J. Phys. C, 10, L131.
55. Dapkus, P. D., Hackett, W. H., Jr., Lorimer, O. G., and Bachrach, R. Z., 1974, J. appl. Phys., 45, 4920.
56. Robbins, D. J., and Thomson, A. J., 1977, Phil. Mag., 36, 999.
57. Robbins, D. J., Cockayne, B., Glasper, J. L., and Lent, B., 1977, paper presented at the Electrochemical Society Conference, Philadelphia. Extended abstract No. 140.
58. Kammermayer, R., Wittwer, V., Eisenreich, N, and Luchnev, K., 1976, Solid St. Commun., 19, 461.
59. Dean, P. J., and Thomas, D. G., 1966, Phys. Rev., 150, 690
60. Dean, P. J., and Herbert, D. C., 1976, J. Lumin., 14, 55
61. Merz, J. L., Faulkner, R. A., and Dean, P. J., 1969, Phys. Rev., 188, 1228.
62. Czaja, W., Krausbauer, L., Curtis, B. J., and Dean, P. J., 1973, Solid St. Commun., 12, 807.
63. Spector, H. N., Mitra, S. S., and Schmeising, H. N., 1967, J. chem. Phys., 46, 2676.
64. Bryant, F. J., Totterdell, D. H. J., and Hagston, W. E., 1971, J. Phys. C, 4, 641.
65. Allen, J. W., Dean, P. J., and White, A. M., 1976, J. Phys. C, 9, L113.
66. Stringfellow, G. B., and Hall, H. T., Jr., 1976, J. electrochem. Soc., 123, 910.