Gaas Dual-Gate Mesfet's

IEEE Transactions on Electron Devices

Volumn 25, Issue 6, 1978, Pages 580-586

  Furutsuka, Takashi ^a   Ogawa, Masaki ^a   Kawamura, Nobuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES;

MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0017983848     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19140     Document Type: Article

References (15)

1. C. A. Mead, “Schottky barrier gate field effect transistor,” Proc. IEEE, vol. 54, pp. 307–308, Feb. 1966.
2. J. A. Turner, A. J. Waller, E. Kelly, and D. Parker, “Dual-gate gallium-arsenide microwave field-effect transistor,” Electron. Lett., vol. 7, pp. 661–662, Nov. 1971.
3. S. Asai, F. Murai, and H. Kodera, “The GaAs dual-gate FET with low noise and wide dynamic range, ’’ i n 1973 IEEE Int. Electron Devices Conf., Dig. Tech. Papers, pp. 64–67.
4. C. A. Liechti, “Characteristics of dual-gate GaAs MESFET’s,” in Proc. 1974 European Microwave Conf., pp. 87–91.
5. C. A. Liechti, “Performance of dual-gate GaAs MESFET's as gain-con-trolled amplifiers and high-speed modulators,” IEEE Trans. Microwave Theory Tech., vol. MTT-23, pp. 461–469, June 1975.
6. R. Dean and R. Matarese, “Submicrometer self-aligned dual-gate GaAs FET, '’ IEEE Trans. Electron Devices, vol. ED-22, pp. 358–360, June 1975.
7. S. Asai, F. Murai, and H. Kodera, “GaAs dual-gate Schottky-barrier FET's for microwave frequencies,” IEEE Trans. Electron Devices, vol. ED-22, pp. 897–904, Oct. 1975.
8. H. Statz, H. A. Haus, and R. A. Pucel, “Noise characteristics of gallium arsenide field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549–562, Sept. 1974.
9. R. Pucel, H. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics, vol. 38. New York: Academic Press, 1975, pp. 195–265.
10. R. A. Pucel, D. J. Massé, and C. F. Krumm, “Noise performance of gallium arsenide field-effect transistors,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 243–255, Apr. 1976.
11. P. Wolf, “Microwave properties of Schottky-barrier field-effect transistors,” IBM J. Res. Develop., vol. 14, pp. 125–141, Mar. 1970.
12. M. Ogawa, K. Ohata, T. Furutsuka, and N. Kawamura, “Sub-micron single-gate and dual-gate MESFET's with improved low noise and high gain performance,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 300–305, June 1976.
13. S. Asai, S. Okazaki, and H. Kodera, “Optimized design of GaAs FET's for low-noise microwave amplifiers,” Solid-State Electron., vol. 19, pp. 463–470, June 1976.
14. T. Nozaki, M. Ogawa, H. Terao, and H. Watanabe, “Multi-layer epitaxial technology for the Schottky barrier GaAs field-effect transistor,” in Proc. 1974 Int. Symp. Gallium Arsenide and Related Compounds, pp. 46–54.
15. D. P. Kennedy and R. R. O’Brien, “Computer aided two -dimensional analysis of the junction field -effect transistor,” IBM J. Res. Develop., vol. 14, pp. 95–116, Mar. 1970.