C-V characteristics of metal-titanium dioxide-silicon capacitors

Solid State Electronics

Volumn 21, Issue 6, 1978, Pages 837-846

  Brown, W D ^a   Grannemann, W W ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS; TITANIUM COMPOUNDS - THIN FILMS;

CAPACITORS;

EID: 0017982227     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(78)90308-8     Document Type: Article

References (13)

1. The Dielectric Properties of the Rutile Form of TiO2
2. Dielectric properties of normal, reduced, and specially reduced rutile (TiO2) single crystals at room temperature
3. Titanium-dioxide dielectric films prepared by vapor reaction
4. TiO[sub 2] Film Properties as a Function of Processing Temperature
5. Lateral AC current flow model for metal-insulator-semiconductor capacitors