The Resistive Gate CTD Area-Image Sensor

IEEE Journal of Solid-State Circuits

Volumn 13, Issue 1, 1978, Pages 61-65

  Heyns, Hendrik ^a   van Santen, J G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

CHARGE-TRANSFER DEVICES;

IMAGE SENSORS;

EID: 0017935393     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1978.1050996     Document Type: Article

References (13)

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2. D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE, vol. 63, pp 38–67, Jan. 1975.
3. M. F. Tompsett, G. F. Amelio, W. J. Bertram, R. R. Buckley, W. J. McNamara, J. C. Mikkelsen, and D. A. Sealer, “Charge coupled imaging devices: Experimental results,” IEEE Trans. Electron. Devices, vol. ED-18, pp. 992–996, Nov. 1971.
4. R. L. Rodgers, III, “A 512 ×320 element silicon imaging device,” in ISSCC Dig. Tech. Papers. 1975. p. 188.
5. G. F. Amelio, “Physics and applications of charge-coupled devices,” in IEEE EASTCON Rec. 1973.
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7. M. V. Whelan, L. A. Daverveld, and J. G. de Groot, “Resistive insulated gate arrays and their applications,” Philips Res. Rep., vol. 30, pp.436-482, 1975.
8. L. J. M. Esser, “The peristaltic charge-coupled device: A new type of charge-transfer device,” Electron. Lett., vol. 8, pp. 620-621, Dec. 1972.
9. “The parasitic charge-coupled device for high-speed charge transfer,” in ISSCC. Dig. Tech. Papers. 1974. p.28.
10. H. L. Peek, “Twin-layer PCCD performance for different doping levels of the surface layer,” IEEE J. Solid-State Circuits, vol. SC-l1, pp. 167–170, Feb. 1976.
11. K. Hoffmann, “Surface charge transport with an MOS transmission line.” Solid-State Electron., vol. 20. pp. 177–181. 1977.
12. Y. Daimon, A. M. Mohsen, and T. C. McGill, “Final stage of the charge-transfer process in charge-coupled devices,” IEEE Trans. Electron. Devices. vol. ED-21. pp, 266–272. Apr, 1974.
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