Hole traps in bulk and epitaxial gaas crystals

Electronics Letters

Volumn 13, Issue 22, 1977, Pages 666-668

  Mitonneau, A ^a   Martin, G M ^a   Mircea, A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

Gallium arsenide; Hole traps; III V semiconductors; Semiconductor epitaxial layers

Indexed keywords

GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0017542223     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770473     Document Type: Article

References (10)

1. MARTIN, G. M., MITONNEAU, A., and MIRCEA, A.: ‘Electron traps in bulk and epitaxial GaAs crystals’, Electron. Lett, 1977, 13, pp. 191-193
2. LANG, D. V.: ‘Deep level transient spectroscopy: a new method to characterize traps in semiconductors’, J. Appl. Phys., 1974, 45, pp. 3023-3033
3. MITONNEAU, A., MARTIN, G. M., and MIRCEA, A.: Proceedings or 6th international symposium on GaAs and related compounds, Edinburgh, Sept. 1976 (Institute of Physics, London, 33a, 1977)
4. LANG, D. V., and LOGAN, R. A.: ‘A study of deep levels in GaAs by capacitance spectroscopy’, J. Electron. Mat., 1975, 4, pp. 1053-1066
5. MIRCEA, A., MITONNEAU, A., and VANNIMENUS, J.: ‘Temperature dependence of ionization energies of deep bound states in semiconductors’, J. Physique (Lettres), 1977, 38, L41-L43
6. MARTIN, G. M., and MITONNEAU, A.: ‘Assessment of impurity contamination in GaAs from deep level transient spectroscopy’. 2nd symposium on solid state device technology, Munster, Mar. 1977
7. LANG, D. V., and KIMERLING, L. C.: ‘A new technique for defect spectroscopy in semiconductors: application to 1-MeV electron irradiated n-GaAs’ in ‘Lattice defects in semiconductors’ (Institute of Physics, London, 1974), pp. 581-588
8. SAKAI, K., and IKOMA, T.: ‘Deep levels in GaAs by capacitance methods’, Appl. Phys., 1974, 5, pp. 165-171
9. HASEGAWA, H., and MAJERFELD, A.: ‘Majority-carrier traps in n- and p-type epitaxial GaAs’, Electron. Lett., 1975, 11, pp. 286-289
10. VASILIEV, A. V., IPPOLITOVA, G. K., OMEL'YANOVSKII, E. M., and RYSKIN, A. I.: ‘Energy spectrum of V impurities in GaAs’, Sov. Phys. Semicond., 1976, 10, pp. 341-342