Simplified gaas M.E.S.F.E.T. model to 10 ghz

Electronics Letters

Volumn 13, Issue 18, 1977, Pages 549-551

  Minasian, R A ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

Equivalent circuits; Field effect transistors; Gallium arsenide

Indexed keywords

MICROWAVE DEVICES;

MES FET;

TRANSISTORS, FIELD EFFECT;

EID: 0017537468     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770395     Document Type: Article

References (7)

1. PUCEL, R., HAUS, H., and STATZ, H.: ‘Signal and noise properties of gallium arsenide microwave field-effect transistors’ in ‘Advances in electronics and electron physics-Vol. 38’ (Academic Press, New York, 1975), pp. 195-265
2. LIECHTI, C., GOWEN, E., and COHEN, J.: ‘GaAs microwave Schottky-gate FET’, International solid-state circuits conference, Digest of Technical Papers, 1972, pp. 158-159
3. HORNBUCKLE, D., and KUHLMAN, L.: ‘Broad-band medium-power amplification in the 2-124 GHz range with GaAs MESFET's, IEEE Trans., 1976, MTT-24, pp. 338-342
4. NEIDERT, R. E., and WILLING, H. A.: ‘Wide-band gallium arsenide power MESFET amplifier’, IEEE Trans., 1976, MTT-24, pp. 342-350
5. LIECHTI, C., and TILLMAN, R.: ‘Design and performance of microwave amplifiers with GaAs Schottky-gate field effect transistors’, IEEE Trans., 1974, MTT-22, pp. 510-517
6. SLAYMAKER, N. A., SOARES, R. A., and TURNER, J. A.: ‘GaAs MESFET small signal X-band amplifiers’, IEEE Trans., 1976, MTT-24, pp. 329-337
7. LIECHTI, C. A., and LARRICK, R. B.: ‘Performance of GaAs MESFET's at low temperatures’, IEEE Trans., 1976, MTT-24, pp. 376-381