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Volumn 14, Issue 1, 1977, Pages 89-97

Relative ion sputtering yield measurements by integration of secondary ion energy distribution using a retarding-dispersive Ion energy analyzer

Author keywords

79.20

Indexed keywords

ION ENERGY ANALYZERS;

EID: 0017536430     PISSN: 03403793     EISSN: 14320649     Source Type: Journal    
DOI: 10.1007/BF00882637     Document Type: Article
Times cited : (31)

References (36)
  • 1
    • 84933621511 scopus 로고    scopus 로고
    • A.R.Krauss, D.M.Gruen: J. Nucl. Mat. 63 (in press)
  • 11
    • 0012701841 scopus 로고
    • The theoretical and experimental study of the ionization processes during the low energy ion sputtering
    • (1974) Surface Science , vol.44 , pp. 47
    • Sroubek, Z.1
  • 13
    • 0344477596 scopus 로고
    • Processus de formation d'ions à partir d'atomes éjectés dans des états électroniques surexcités lors du bombardement ionique des métaux de transition
    • (1970) Journal de Physique , vol.31 , pp. 93
    • Blaise, G.1    Slodzian, G.2
  • 21
    • 84933621514 scopus 로고    scopus 로고
    • J.Kirschner, P.Staib: 34th Ann Conf. Physical Electronics, Murray Hill, NJ (1974)
  • 23
    • 84933621513 scopus 로고    scopus 로고
    • Extranuclear Laboratories Model No. 270-9 with 2.2 MHz RF head
  • 26
    • 84933621518 scopus 로고    scopus 로고
    • Extranuclear Laboratories model 13 high-voltage RF head
  • 29
    • 84933621517 scopus 로고    scopus 로고
    • G.Sparrow: Private communication
  • 31
    • 84933621520 scopus 로고    scopus 로고
    • UTI model 100C


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.